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V = 10 V, DS(on) GS I = 31 A D produced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 100 nC) MOSFET technology has been especially tailored to Low Crss (Typ. 63.5 pF) reduce on-state resistance, and to provide superior switching performance and high avalanche energy 100% Avalanche Tested strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D TO-3PN S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQA62N25C Unit V Drain-Source Voltage 250 V DSS I - Continuous (T = 25C) Drain Current 62 A D C - Continuous (T = 100C) 39 A C I (Note 1) Drain Current - Pulsed 248 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 2300 mJ AS I Avalanche Current (Note 1) 62 A AR E (Note 1) Repetitive Avalanche Energy 29.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25C) 298 W D C - Derate above 25C 2.38 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics FQA62N25C Symbol Parameter Unit R Thermal Resistance, Junction-to-Case, Max. C/W JC 0.42 0.24 R Thermal Resistance, Case-to-Sink, Typ. C/W CS R Thermal Resistance, Junction-to-Ambient, Max. C/W JA 40 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQA62N25C Rev. C2