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FQA90N08 N-Channel QFET MOSFET June 2014 FQA90N08 N-Channel QFET MOSFET 80 V, 90 A, 16 m Description Features This N-Channel enhancement mode power MOSFET 90 A, 80 V, R = 16 m (Max) V = 10 V, DS(on) GS is produced using Fairchild Semiconductors I = 45 A proprietary planar stripe and DMOS technology. This D advanced MOSFET technology has been especially tailored Low Gate Charge (Typ. 84 nC) to reduce on-state resistance, and to provide superior Low Crss (Typ. 200 pF) switching performance and high avalanche energy strength. These devices are suitable for switched mode power 100% Avalanche Tested supplies, audio amplifier, DC motor control, and variable 175C Maximum Junction Temperature Rating switching power applications. D G G D TO-3PN S S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQA90N08 Unit V Drain-Source Voltage 80 V DSS I - Continuous (T = 25C) Drain Current 90 A D C - Continuous (T = 100C) 63.5 A C I Drain Current - Pulsed (Note 1) 360 A DM V Gate-Source Voltage 25 V GSS E Single Pulsed Avalanche Energy (Note 2) 1360 mJ AS I Avalanche Current (Note 1) 90 A AR E (Note 1) Repetitive Avalanche Energy 21.4 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 6.5 V/ns P Power Dissipation (T = 25C) 214 W D C - Derate above 25C 1.43 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQA90N08 Unit R Thermal Resistance, Junction-to-Case, Max. 0.7 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 40 C/W JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQA90N08 Rev. C2