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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 4.0 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 68 nC) MOSFET technology has been especially tailored to Low Crss (Typ. 30 pF) reduce on-state resistance, and to provide superior switching performance and high avalanche energy 100% Avalanche Tested strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D TO-3PF S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQAF13N80 Unit V Drain-Source Voltage 800 V DSS I - Continuous (T = 25C) Drain Current 8.0 A D C - Continuous (T = 100C) 5.1 A C I (Note 1) Drain Current - Pulsed 32 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 1100 mJ AS I Avalanche Current (Note 1) 8.0 A AR E (Note 1) Repetitive Avalanche Energy 12 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25C) 120 W D C - Derate above 25C 0.96 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQAF13N80 Unit R Thermal Resistance, Junction-to-Case, Max. C/W JC 1.04 R Thermal Resistance, Junction-to-Ambient, Max. 40 C/W JA 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQAF13N80 Rev. C1