FQB10N50CF N-Channel QFET FRFET MOSFET October 2013 FQB10N50CF N-Channel QFET FRFET MOSFET 500 V, 10 A, 610 m Features Description 10 A, 500 V, R = 610 m (Max.) V = 10 V, I = 5 A This N-Channel enhancement mode power MOSFET is pro- DS(on) GS D duced using Fairchild Semiconductors proprietary planar stripe Low gate charge ( Typ. 45 nC) and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and Low Crss ( Typ. 17.5 pF) to provide superior switching performance and high avalanche 100% avalanche tested energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and elec- Fast recovery body diode tronic lamp ballasts. D D G G 2 S D -PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FQB10N50CFTM WS Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o 10 - Continuous (T = 25 C) C I Drain Current A D o - Continuous (T = 100 C) 6.35 C I Drain Current - Pulsed (Note 1) 40 A DM E Single Pulsed Avalanche Energy (Note 2) 825 mJ AS I Avalanche Current (Note 1) 10 A AR E Repetitive Avalanche Energy (Note 1) 14.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 2.0 V/ns o (T = 25 C) 143 W C P Power Dissipation D o o - Derate above 25C1.14W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQB10N50CFTM WS Unit R Thermal Resistance, Junction to Case, Max 0.87 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. 40 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQB10N50CF Rev. C0 FQB10N50CF N-Channel QFET FRFET MOSFET o Package Marking and Ordering Information T = 25 C unless otherwise noted C Device Marking Device Package Reel Size Tape Width Quantity FQB10N50CF FQB10N50CFTM WS D2-PAK 330mm 24mm 800 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics o BV Drain to Source Breakdown Voltage I = 250 A, V = 0V, T = 25 C 500 - - V DSS D GS J BV Breakdown Voltage Temperature o o DSS I = 250 A, Referenced to 25C- 0.5 - V/ C D / T Coefficient J V = 500V , V = 0V - - 10 DS GS I Zero Gate Voltage Drain Current A DSS o V = 400V, T = 125C- -100 DS C I Gate to Body Leakage Current V = 30V, V = 0V - - 100 nA GSS GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A 2.0 - 4.0 V GS(th) GS DS D R Static Drain to Source On Resistance V = 10V, I = 5A - 0.51 0.61 DS(on) GS D g Forward Transconductance V = 20V, I = 5A - 105 - S FS DS D Dynamic Characteristics C Input Capacitance - 1660 2210 pF iss V = 25V, V = 0V DS GS C Output Capacitance - 182 240 pF oss f = 1MHz C Reverse Transfer Capacitance - 17.5 26 pF rss Q Total Gate Charge at 10V -45 60 nC g(tot) V = 400V, I = 10A Q Gate to Source Gate Charge DS D - 8 - nC gs V = 10V GS Q Gate to Drain Miller Charge - 19 - nC gd (Note 4) Switching Characteristics t Turn-On Delay Time -25 60 ns d(on) V = 250V, I = 10A t Turn-On Rise Time - 47 105 ns DD D r R = 25 G t Turn-Off Delay Time - 138 285 ns d(off) t Turn-Off Fall Time (Note 4) - 55 120 ns f Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 10 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 40 A SM V Drain to Source Diode Forward Voltage V = 0V, I = 10A - - 1.4 V SD GS SD t Reverse Recovery Time -91 - ns V = 0V, I = 10A rr GS SD dI /dt = 100A/ s Q Reverse Recovery Charge - 220 - nC F rr Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 16.5mH, I = 10A, V = 50V, R = 25 , Starting T = 25C AS DD G J 3: I 10A, di/dt 200A/ s, V BV , Starting T = 25C SD DD DSS J 4: Essentially Independent of Operating Temperature Typical Characteristics 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FQB10N50CF Rev. C0