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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 3.5 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 60 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 23 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D TO-3PF S S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQAF11N90C Unit V Drain-Source Voltage 900 V DSS I - Continuous (T = 25C) Drain Current 7.0 A D C - Continuous (T = 100C) 4.4 A C I (Note 1) Drain Current - Pulsed 28.0 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 960 mJ AS I Avalanche Current (Note 1) 7.0 A AR E Repetitive Avalanche Energy (Note 1) 12 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25C) 120 W D C - Derate above 25C 0.96 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds. Thermal Characteristics FQAF11N90C + Thermal Resistance, Junction-to-Case, Max. 1.04 6 + 40 6 Thermal Resistance, Junction-to-Ambient, Max. www.fairchildsemi.com 2003 Fairchild Semiconductor Corporation 1 FQAF11N90C Rev. C1