X-On Electronics has gained recognition as a prominent supplier of FQA9N90_F109 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQA9N90_F109 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQA9N90_F109 ON Semiconductor

FQA9N90_F109 electronic component of ON Semiconductor
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Part No.FQA9N90_F109
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET 900V N-Channel QFET
Datasheet: FQA9N90_F109 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.1325 ea
Line Total: USD 4.13 
Availability - 66
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
66
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 4.1325
10 : USD 3.5148
25 : USD 3.3763
100 : USD 2.865
250 : USD 2.5775
450 : USD 2.4923
900 : USD 2.3538
2700 : USD 2.3538
5400 : USD 2.3112

   
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We are delighted to provide the FQA9N90_F109 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQA9N90_F109 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FQA9N90-F109 N-Channel QFET MOSFET FQA9N90- F109 N-Channel QFET MOSFET 900 V, 8.6 A, 1 .3 Description This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductors proprietary planar 8.6 A, 900 V, R = 1.3 (Max.) V = 10 V, I = 4.3 A D DS(on) GS stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 55 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and Low Crss (Typ. 25 pF) high avalanche energy strength. These devices are suitable for 100% Avalanche Tested switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. RoHS Compliant D G G D TO-3PN S S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQA9N90-F109 Unit V Drain-Source Voltage 900 V DSS I Drain Current - Continuous (T = 25C) 8.6 A D C - Continuous (T = 100C) 5.45 A C (Note 1) I Drain Current - Pulsed 34.4 A DM V Gate-Source Voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 900 mJ AS (Note 1) I Avalanche Current 8.6 A AR (Note 1) E Repetitive Avalanche Energy 24 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.0 V/ns P Power Dissipation (T = 25C) 240 W D C - Derate Above 25C 1.92 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQA9N90-F109 Unit R Thermal Resistance, Junction-to-Case, Max. 0.52 C/W JC R Thermal Resistance, Case-to-Sink, Typ. C/W 0.24 CS R Thermal Resistance, Junction-to-Ambient, Max. 40 C/W JA 2007 Semiconductor Components Industries, LLC. 1 Publication Order Number: September-2017, Rev. 3 FQA9N90-F109/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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