IPP06CN10L G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, logic level R 6.2 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Type IPP06CN10L G Package PG-TO220-3 Marking 06CN10L Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 2) Continuous drain current I 100 A T =25 C D C T =100 C 92 C 3) I T =25 C 400 Pulsed drain current D,pulse C E Avalanche energy, single pulse I =100 A, R =25 480 mJ AS D GS I =100 A, V =80 V, D DS Reverse diode dv /dt dv /dt di /dt =100 A/s, 6 kV/s T =175 C j,max 4) V 20 V Gate source voltage GS P T =25 C Power dissipation 214 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.01 page 1 2007-10-01IPP06CN10L G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.7 K/W thJC R Thermal resistance, minimal footprint - - 62 thJA 2 5) junction - ambient 6 cm cooling area -- 40 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 100 - - V (BR)DSS GS D V V =V , I =180 A Gate threshold voltage 1.2 1.85 2.4 GS(th) DS GS D V =80 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25 C j V =80 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS R V =4.5 V, I =50 A Drain-source on-state resistance - 5.9 7.9 m DS(on) GS D V =10 V, I =100 A - 5.1 6.2 GS D Gate resistance R - 1.5 - G V >2 I R , DS D DS(on)max g Transconductance 96 192 - S fs I =100 A D 1) J-STD20 and JESD22 2) Current is limited by bondwire with an R =0.7 K/W the chip is able to carry 124 A. thJC 3) See figure 3 4) T =150 C and duty cycle D=0.01 for V <-5V jmax gs 5) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.01 page 2 2007-10-01