MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPD65R1K4C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPD65R1K4C6 DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, 2 1 lighter and cooler. 3 Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Drain Very high commutation ruggedness Pin 2 Easy to use/drive Pb-free plating, Halogen free mold compound Fully qualified according to JEDEC for Industrial Applications Gate Pin 1 Source Pin 3 Applications Hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and Lighting. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j max RDS(on),max 1.4 Qg,typ 10.5 nC ID,pulse 8.3 A Eoss 400V 1.15 J Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPD65R1K4C6 PG-TO 252 65C61K4 see Appendix A Final Data Sheet 2 Rev. 2.1, 2020-05-20