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V = 10 V, DS(on) GS I = 32.5 A produced using Fairchild Semiconductors proprietary D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 170 nC) MOSFET technology has been especially tailored to Low Crss (Typ. 90 pF) reduce on-state resistance, and to provide superior switching performance and high avalanche energy 100% Avalanche Tested strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D TO-3PN S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQA65N20 Unit V Drain-Source Voltage 200 V DSS I - Continuous (T = 25C) Drain Current 65 A D C - Continuous (T = 100C) 41 A C I Drain Current - Pulsed (Note 1) 260 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 1010 mJ AS I Avalanche Current (Note 1) 65 A AR E Repetitive Avalanche Energy (Note 1) 31 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25C) 310 W D C - Derate above 25C 2.5 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQA65N20 Unit R Thermal Resistance, Junction-to-Case, Max. C/W JC 0.4 R Thermal Resistance, Case-to-Sink, Typ C/W 0.24 CS R Thermal Resistance, Junction-to-Ambient, Max. C/W JA 40 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQA65N20 Rev. C2