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V = 10 V, DS(on) GS I = 16 A D produced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 82.5 nC) MOSFET technology has been especially tailored to Low Crss (Typ. 185 pF) reduce on-state resistance, and to provide superior switching performance and high avalanche energy 100% Avalanche Tested strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D TO-3PN S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQA32N20C Unit V Drain-Source Voltage 200 V DSS I Drain Current - Continuous (T = 25C) 32 A D C - Continuous (T = 100C) 20.4 A C I Drain Current - Pulsed (Note 1) 128 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 955 mJ AS I (Note 1) Avalanche Current 32 A AR E Repetitive Avalanche Energy (Note 1) 20.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25C) 204 W D C - Derate above 25C 1.63 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics FQA32N20C Symbol Parameter Unit R Thermal Resistance, Junction-to-Case, Max. 0.61 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.24 C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 40 C/W JA 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQA32N20C Rev. C2