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V = 10 V, I = These N-Channel enhancement mode power field effect DS(on) GS D transistors are produced using Fairchilds proprietary, planar 14.2 A stripe, DMOS technology. Low Gate Charge (Typ. 110 nC) This advanced technology has been especially tailored to Low Crss (Typ. 60 pF) minimize on-state resistance, provide superior switching 100% Avalanche Tested performance, and withstand high energy pulse in the avalanche RoHS compliant and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. D G G D TO-3PN S S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQA28N50 Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 28.4 A D C - Continuous (T = 100C) 18 A C I Drain Current - Pulsed (Note 1) 113.6 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 1300 mJ AS I (Note 1) Avalanche Current 28.4 A AR E Repetitive Avalanche Energy (Note 1) 31 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 310 W D C - Derate above 25C 2.5 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit R Thermal Resistance, Junction-to-Case -- 0.4 C/W JC R Thermal Resistance, Case-to-Sink 0.24 -- C/W CS R Thermal Resistance, Junction-to-Ambient -- 40 C/W JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQA28N50 Rev. C0