X-On Electronics has gained recognition as a prominent supplier of MCP87130T-U/LC MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCP87130T-U/LC MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCP87130T-U/LC Microchip

MCP87130T-U/LC electronic component of Microchip
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Part No.MCP87130T-U/LC
Manufacturer: Microchip
Category: MOSFETs
Description: Microchip Technology MOSFET N-channel 13.0mohm MOSFET
Datasheet: MCP87130T-U/LC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5516 ea
Line Total: USD 0.55 
Availability - 1
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5516
10 : USD 0.5402
30 : USD 0.5305
100 : USD 0.5211

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Qg - Gate Charge
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCP87130T-U/LC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCP87130T-U/LC and other electronic components in the MOSFETs category and beyond.

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MCP87130 High-Speed N-Channel Power MOSFET Features: Description: Low Drain-to-Source On Resistance (R ) DS(ON) The MCP87130 is an N-Channel power MOSFET in a Low Total Gate Charge (Q ) and Gate-to-Drain popular PDFN 5 mm x 6 mm package as well as a G Charge (Q ) GD PDFN 3.3mmx3.3mm package. Advanced Low Series Gate Resistance (R ) packaging and silicon processing technologies allow G Capable of Short Dead-Time Operation the MCP87130 to achieve a low Q for a given R G DS(ON) RoHS Compliant value, resulting in a low Figure of Merit (FOM). Combined with low R , the low FOM of the MCP87130 G Applications: allows high efficiency power conversion with reduced Point-of-Load DC-DC Converters switching and conduction losses. High Efficiency Power Management in Servers, Networking, and Automotive Applications Package Type PDFN 5 x 6 PDFN 3.3 x 3.3 1 8 S D S 2 7 D S 3 6 D 5 G 4 D Product Summary Table: Unless otherwise indicated, T = +25C. A Parameters Sym.Min.Typ.Max.Units Conditions Operating Characteristics Drain-to-Source Breakdown Voltage BV 25 V V = 0V, I = 250 A DSS GS D Gate-to-Source Threshold Voltage V 1.1 1.35 1.7 V V = V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 13.8 16.5 m V = 4.5V, I = 10A DS(ON) GS D 11.3 13.5 m V = 10V, I = 10A GS D Total Gate Charge Q 5.5 8 nC V = 12.5V, I = 10A, G DS D V = 4.5V GS Gate-to-Drain Charge Q 2.6 nC V = 12.5V, I = 10A GD DS D Series Gate Resistance R 1.7 G Thermal Characteristics Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN R 73 C/W Note 1 JX Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN R 3.3 C/W Note 2 JC Thermal Resistance Junction-to-X, 8L 5x6-PDFN R 58 C/W Note 1 JX Thermal Resistance Junction-to-Case, 8L 5x6-PDFN R 3.3 C/W Note 2 JC Note 1: R is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1 x 1 mounting pad of 2 oz. cop- JX per. This characteristic is dependent on users board design. 2: R is determined using JEDEC 51-14 Method. This characteristic is determined by design. JC 2013 Microchip Technology Inc. DS20005159B-page 1MCP87130 Notice: Stresses above those listed under 1.0 ELECTRICAL Maximum Ratings may cause permanent damage to CHARACTERISTICS the device. This is a stress rating only and functional operation of the device at those or any other conditions Absolute Maximum Ratings above those indicated in the operational sections of this specification is not intended. Exposure to maximum V .......................................................................+25V DS rating conditions for extended periods may affect V ........................................................... +10.0V / -8V GS device reliability. I Continuous .............................................................. D, 8L 5x6-PDFN ............................. 43A, T = +25C C 8L 3.3x3.3-PDFN ....................... 43A, T = +25C C P ................................................................................. D 8L 5x6-PDFN ........................... 2.1W, T = +25C A 8L 3.3x3.3-PDFN ...................1.7W, T = +25C A T , T .............................................. -55C to +150C J STG E Avalanche Energy....................................... 50 mJ AS I =10A, L= 1mH, R =25 D G DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, T = +25C A Parameters Sym.Min.Typ.Max.Units Conditions Static Characteristics Drain-to-Source BV 25 V V = 0V, I = 250 A DSS GS D Breakdown Voltage Drain-to-Source Leakage Current I 1 A V = 0V, V = 20V DSS GS DS Gate-to-Source Leakage Current I 100 nA V = 0V, V = 10V/-8V GSS DS GS Gate-to-Source Threshold Voltage V 1.1 1.35 1.7 V V = V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 17.3 m V = 3.3V, I = 10A DS(ON) GS D 13.8 16.5 m V = 4.5V, I = 10A GS D 11.3 13.5 m V = 10V, I = 10A GS D Transconductance g 40 S V = 12.5V, I = 10A fs DS D Dynamic Characteristics Input Capacitance C 400 pF V = 0V, V = 12.5V, f = 1 MHz ISS GS DS Output Capacitance C 200 pF V = 0V, V = 12.5V, f = 1 MHz OSS GS DS Reverse Transfer Capacitance C 60 pF V = 0V, V = 12.5V, f = 1 MHz RSS GS DS Total Gate Charge Q 5.5 8 nC V = 12.5V, I = 10A, V = 4.5V G DS D GS Gate-to-Drain Charge Q 2.6 nC V = 12.5V, I = 10A GD DS D Gate-to-Source Charge Q 0.9 nC V = 12.5V, I = 10A GS DS D Gate Charge at V Q 0.6 nC V = 12.5V, I = 10A GS(TH) G(TH) DS D Output Charge Q 3.7 nC V = 12.5V, V = 0 OSS DS GS Turn-On Delay Time t 2.2 ns V = 12.5V, V = 4.5V, d(on) DS GS I = 10A, R = 2 D G Rise Time t 5.4 ns V = 12.5V, V = 4.5V, r DS GS I = 10A, R = 2 D G Turn-Off Delay Time t 4.2 ns V = 12.5V, V = 4.5V, d(off) DS GS I = 10A, R = 2 D G Fall Time t 2.1 ns V = 12.5V, V = 4.5V, f DS GS I = 10A, R = 2 D G Series Gate Resistance R 1.7 G DS20005159B-page 2 2013 Microchip Technology Inc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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