X-On Electronics has gained recognition as a prominent supplier of MCP87090T-U/LC MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCP87090T-U/LC MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCP87090T-U/LC Microchip

MCP87090T-U/LC electronic component of Microchip
MCP87090T-U/LC Microchip
MCP87090T-U/LC MOSFETs
MCP87090T-U/LC  Semiconductors

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See Product Specifications
Part No. MCP87090T-U/LC
Manufacturer: Microchip
Category: MOSFETs
Description: Microchip Technology MOSFET N-channel 9.0mohm MOSFET
Datasheet: MCP87090T-U/LC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 25
Multiples : 1
25 : USD 4.322
100 : USD 2.0987
500 : USD 1.0392
825 : USD 0.9773
1650 : USD 0.7333
2475 : USD 0.684
3300 : USD 0.6714
N/A

Obsolete
0
MOQ : 3300
Multiples : 3300
3300 : USD 0
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0569
10 : USD 0.5786
25 : USD 0.3772
100 : USD 0.3398
250 : USD 0.3298
500 : USD 0.3287
3300 : USD 0.3277
N/A

Obsolete
0
MOQ : 14
Multiples : 1
14 : USD 5.569
25 : USD 4.5363
100 : USD 2.1834
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Qg - Gate Charge
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCP87090T-U/LC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCP87090T-U/LC and other electronic components in the MOSFETs category and beyond.

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MCP87090 High-Speed N-Channel Power MOSFET Features: Description: Low Drain-to-Source On Resistance (R ) DS(ON) The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (Q ) and Gate-to-Drain G popular PDFN 5 mm x 6 mm package, as well as a Charge (Q ) GD PDFN 3.3mmx3.3mm package. Advanced Low Series Gate Resistance (R ) G packaging and silicon processing technologies allow Capable of Short Dead-Time Operation the MCP87090 to achieve a low Q for a given R G DS(ON) value, resulting in a low Figure of Merit (FOM). RoHS Compliant Combined with low R , the low FOM of the MCP87090 G device allows high efficiency power conversion with Applications: reduced switching and conduction losses. Point-of-Load DC-DC Converters High Efficiency Power Management in Servers, Networking, and Automotive Applications Package Type PDFN 5 x 6 PDFN 3.3 x 3.3 SD1 8 S D 2 7 S 3 6 D G45 D Product Summary Table: Unless otherwise indicated, T = +25C A Parameters Sym.Min.Typ.Max.Units Conditions Operating Characteristics Drain-to-Source Breakdown Voltage BV 25 V V = 0V, I = 250 A DSS GS D Gate-to-Source Threshold Voltage V 1.1 1.35 1.7 V V = V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 10 12 m V = 4.5V, I = 17A DS(ON) GS D 8.5 10.5 m V = 10V, I = 17A GS D Total Gate Charge Q 7.5 10 nC V = 12.5V, I = 17A, V = 4.5V G DS D GS Gate-to-Drain Charge Q 2.8 nC V = 12.5V, I = 17A GD DS D Series Gate Resistance R 1.8 G Thermal Characteristics Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN R 70 C/W Note 1 JX Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN R 3.3 C/W Note 2 JC Thermal Resistance Junction-to-X, 8L 5x6-PDFN R 55 C/W Note 1 JX Thermal Resistance Junction-to-Case, 8L 5x6-PDFN R 3.2 C/W Note 2 JC Note 1: R is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1 x 1 mounting pad of 2 oz. copper. JX This characteristic is dependent on users board design. 2: R is determined using JEDEC 51-14 Method. This characteristic is determined by design. JC 2013 Microchip Technology Inc. DS20002332B-page 1MCP87090 E Avalanche Energy .................................... 84.5 mJ 1.0 ELECTRICAL AS CHARACTERISTICS I =13A, L= 1mH, R =25 D G Notice: Stresses above those listed under Maximum Absolute Maximum Ratings Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of V .......................................................................+25V DS the device at those or any other conditions above those V ........................................................... +10.0V / -8V indicated in the operational sections of this GS specification is not intended. Exposure to maximum I Continuous .............................................................. D, rating conditions for extended periods may affect 8L 5x6-PDFN ............................. 51A, T = +25C C device reliability. 8L 3.3x3.3-PDFN ....................... 50A, T = +25C C P ................................................................................. D 8L 5x6-PDFN ........................... 2.2W, T = +25C A 8L 3.3x3.3-PDFN ..................... 1.8W, T = +25C A T , T ..............................................-55C to +150C J STG DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, T = +25C. A Parameters Sym.Min.Typ.Max.Units Conditions Static Characteristics Drain-to-Source BV 25 V V = 0V, I = 250 A DSS GS D Breakdown Voltage Drain-to-Source Leakage Current I 1 A V = 0V, V = 20V DSS GS DS Gate-to-Source Leakage Current I 100 nA V = 0V, V = 10V/-8V GSS DS GS Gate-to-Source Threshold Voltage V 1.1 1.35 1.7 V V = V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 10 12 m V = 4.5V, I = 17A DS(ON) GS D 8.5 10.5 m V = 10V, I = 17A GS D Transconductance g 62 S V = 12.5V, I = 17A fs DS D Dynamic Characteristics Input Capacitance C 580 pF V = 0V, V = 12.5V, f = 1 MHz ISS GS DS Output Capacitance C 265 pF V = 0V, V = 12.5V, f = 1 MHz OSS GS DS Reverse Transfer Capacitance C 70 pF V = 0V, V = 12.5V, f = 1 MHz RSS GS DS Total Gate Charge Q 7.5 10 nC V = 12.5V, I = 17A, V = 4.5V G DS D GS Gate-to-Drain Charge Q 2.8 nC V = 12.5V, I = 17A GD DS D Gate-to-Source Charge Q 1.2 nC V = 12.5V, I = 17A GS DS D Gate Charge at V Q 0.8 nC V = 12.5V, I = 17A GS(TH) G(TH) DS D Output Charge Q 5 nCV = 12.5V, V = 0 OSS DS GS Turn-On Delay Time t 2.5 ns V = 12.5V, V = 4.5V, d(on) DS GS I = 17A, R = 2 D G Rise Time t 9.3 ns V = 12.5V, V = 4.5V, r DS GS I = 17A, R = 2 D G Turn-Off Delay Time t 5.3 ns V = 12.5V, V = 4.5V, d(off) DS GS I = 17A, R = 2 D G Fall Time t 2.9 ns V = 12.5V, V = 4.5V, f DS GS I = 17A, R = 2 D G Series Gate Resistance R 1.8 G Diode Characteristics Diode Forward Voltage V 0.8 1 V I = 17A, V = 0V FD S GS Reverse Recovery Charge Q 11 nC I = 17A, di/dt = 300 A/s RR S Reverse Recovery Time t 11.5 nS I = 17A, di/dt = 300 A/s rr S DS20002332B-page 2 2013 Microchip Technology Inc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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