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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 3.15 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 19 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching Low Crss (Typ. 35 pF) performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D S TO-220F S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQPF630 Unit V Drain-Source Voltage 200 V DSS I - Continuous (T = 25C) Drain Current 6.3 A D C - Continuous (T = 100C) 4.0 A C I (Note 1) Drain Current - Pulsed 25.2 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 164 mJ AS I Avalanche Current (Note 1) 6.3 A AR E (Note 1) Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25C) 38 W D C - Derate Above 25C 0.30 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Thermal Characteristics Symbol Parameter FQPF630 Unit R Thermal Resistance, Junction-to-Case, Max. 3.32 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 62.5 JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF630 Rev. C1