X-On Electronics has gained recognition as a prominent supplier of FQPF6N70 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQPF6N70 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQPF6N70 ON Semiconductor

FQPF6N70 electronic component of ON Semiconductor
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See Product Specifications
Part No.FQPF6N70
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-CH/700V/3.5A/1.5OHM
Datasheet: FQPF6N70 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
349: USD 1.2676 ea
Line Total: USD 442.39 
Availability - 0
MOQ: 349  Multiples: 349
Pack Size: 349
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 25
Multiples : 1
25 : USD 1.8569
100 : USD 1.47
250 : USD 1.3256

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 349
Multiples : 349
349 : USD 1.2676

   
Manufacturer
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We are delighted to provide the FQPF6N70 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQPF6N70 and other electronic components in the MOSFETs category and beyond.

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FFPF20U60S FFPF20U60S Features High voltage and high reliability  High speed switching  Low forward voltage Applications  General purpose TO-220F  Switching mode power supply 1 2  Free-wheeling diode for motor application  Power switching circuits 1. Cathode 2. Anode ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Peak Repetitive Reverse Voltage 600 V RRM I Average Rectified Forward Current @ T = 100C20 A F(AV) C I Non-repetitive Peak Surge Current 120 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature - 65 to +150 C J, STG Thermal Characteristics Symbol Parameter Value Units R Maximum Thermal Resistance, Junction to Case 1.25 C/W JC Electrical Characteristics T =25 C unless otherwise noted C Symbol Parameter Min. Typ. Max. Units V Maximum Instantaneous Forward Voltage V FM * I = 20A T = 25 C 2.2 F C I = 20A T = 100 C 2.0 F C I Maximum Instantaneous Reverse Current A RM * @ rated V T = 25 C 10 R C T = 100 C 100 C t Maximum Reverse Recovery Time 90 ns rr I Maximum Reverse Recovery Current 8 A rr Q Maximum Reverse Recovery Charge 360 nC rr (I =20A, di/dt = 200A/ s) F W Avalanche Energy 1.0 mJ AVL * Pulse Test: Pulse Width=300 s, Duty Cycle=2% 2000 Fairchild Semiconductor International Rev. F, September 2000FFPF20U60S DC Typical Characteristics 40 1000 100 o T = 100 C 10 C o T = 100 C C 10 o 1 T = 25 C C o T = 25 C C 1 0.1 0.01 0.1 1E-3 100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Forward Voltage , V [V] Reverse Voltage , V [V] F R Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current vs. Forward Current vs. Reverse Voltage 100 200 Typical Capacitance I = 20A F o at 0V = 178 pF T = 25 C 90 C 150 80 70 100 60 50 50 40 1 100 500 0.1 1 10 100 di/dt [A/ s] Reverse Voltage , V [V] R Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time vs. di/dt 30 16 I = 20A F 14 o 25 T = 25 C C 12 20 10 15 8 6 10 4 5 2 0 0 60 80 100 120 140 160 100 500 o di/dt [A/ s] Case Temperature , T [ C] C Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 2000 Fairchild Semiconductor International Rev. F, September 2000 Reverse Recovery Current , I [A] Capacitance , Cj [pF] Forward Current , I [A] rr F Average Forward Current , I [A] Reverse Current , I [ A] Reverse Recovery Time , t [ns] F(AV) R rr

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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