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V = 10 V, DS(on) GS This N-Channel enhancement mode power MOSFET is I = 17.5 A D produced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 85 nC) planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce Low Crss (Typ. 150 pF) on-state resistance, and to provide superior switching 100% Avalanche Tested performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, 175C Maximum Junction Temperature Rating audio amplifier, DC motor control, and variable switching power applications. D G G D S TO-220F S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQPF70N10 Unit V Drain-Source Voltage 100 V DSS I - Continuous (T = 25C) Drain Current 35 A D C - Continuous (T = 100C) 24.7 A C I (Note 1) Drain Current - Pulsed 140 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 1300 mJ AS I Avalanche Current (Note 1) 35 A AR E (Note 1) Repetitive Avalanche Energy 6.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25C) 62 W D C - Derate above 25C 0.41 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 seconds Thermal Characteristics Symbol Parameter FQPF70N10 Unit R Thermal Resistance, Junction-to-Case, Max. 2.42 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF70N10 Rev. C1