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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 4.0 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 35 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 13 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G G D G G S D S TO-220 TO-220F S TO-220F Y-formed S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP8N80C FQPF8N80C Unit V Drain-Source Voltage 800 V DSS I Drain Current - Continuous (T = 25C) 88 * A D C - Continuous (T = 100C) 5.1 5.1 * A C I Drain Current - Pulsed (Note 1) 32 32 * A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 850 mJ AS I (Note 1) Avalanche Current 8A AR E Repetitive Avalanche Energy (Note 1) 17.8 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 178 59 W D C - Derate above 25C 1.43 0.48 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP8N80C FQPF8N80C Unit R Thermal Resistance, Junction-to-Case, Max. 0.89 2.66 C/W JC R Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1