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V = 10 V, These N-Channel enhancement mode power field effect DS(on) GS I = 4.4 A transistors are produced using Fairchilds proprietary, planar D stripe, DMOS technology. Low Gate Charge (Typ. 26.5 nC) This advanced technology has been especially tailored to Low Crss (Typ. 45.5 pF) minimize on-state resistance, provide superior switching 100% Avalanche Tested performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D G G D S TO-220F S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQPF9N25C / FQPF9N25CT Unit V V Drain to Source Voltage 250 DSS o A - Continuous (T = 25 C) 8.8 * C I Drain Current D o A - Continuous (T = 100 C) 5.6 * C A I Drain Current - Pulsed (Note 1) 35.2 * DM V V Gate to Source Voltage 30 GSS mJ E Single Pulsed Avalanche Energy (Note 2) 285 AS A I Avalanche Current (Note 1) 8.8 AR mJ E Repetitive Avalanche Energy (Note 1) 7.4 AR V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 o W (T = 25 C) 38 C P Power Dissipation D o W/C - Derate Above 25C0.3 C T , T Operating and Storage Temperature Range -55 to +150 J STG Maximum Lead Temperature for Soldering Purpose, C T 300 L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Unit FQPF9N25C / FQPF9N25CT 3.29 R Thermal Resistance, Junction to Case, Max. JC C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF9N25C / FQPF9N25CT Rev. C1