X-On Electronics has gained recognition as a prominent supplier of AO3423 MOSFETs across the USA, India, Europe, Australia, and various other global locations. AO3423 MOSFETs are a product manufactured by Alpha & Omega. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

AO3423 Alpha & Omega

AO3423 electronic component of Alpha & Omega
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Part No.AO3423
Manufacturer: Alpha & Omega
Category: MOSFETs
Description: MOSFET P Trench 20V 2A 1.4V @ 250uA 92 mΩ @ 2A,10V SOT-23-3L RoHS
Datasheet: AO3423 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1095 ea
Line Total: USD 0.55 
Availability - 1496
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1496
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 5
Multiples : 5
5 : USD 0.1095
50 : USD 0.0875
150 : USD 0.0766
500 : USD 0.0683
3000 : USD 0.0618
6000 : USD 0.0583

874
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 5
Multiples : 1
5 : USD 0.2296
25 : USD 0.1176
100 : USD 0.1036
197 : USD 0.0882
540 : USD 0.084

40740
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1011
6000 : USD 0.0915
9000 : USD 0.0862
15000 : USD 0.0805
21000 : USD 0.0768
30000 : USD 0.0732
75000 : USD 0.069

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Brand
Drain Current Max
Frequency Max
Gate-Source Voltage Max
Output Power Max
Noise Figure
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain Efficiency
Drain-Source On-Volt
Power Gain
Rad Hardened
Category
Brand Category
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We are delighted to provide the AO3423 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AO3423 and other electronic components in the MOSFETs category and beyond.

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AO3423 20V P-Channel MOSFET General Description Product Summary V -20V The AO3423 uses advanced trench technology to provide DS excellent R , low gate charge and operation with gate DS(ON) I (at V =-10V) -2A D GS voltages as low as 2.5V. This device is suitable for use as R (at V = -10V) < 92m DS(ON) GS a load switch applications. R (at V = -4.5V) < 118m DS(ON) GS R (at V = -2.5V) < 166m DS(ON) GS Typical ESD protection HBM Class 2 SOT23 Top View Bottom View D D D G G S S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV --2200 VV DDSS Gate-Source Voltage V 12 V GS T =25C -2 A Continuous Drain I D Current T =70C -2 A A C Pulsed Drain Current I -17 DM T =25C 1.4 A P W D B Power Dissipation T =70C 0.9 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 65 90 C/W R A D JA Maximum Junction-to-Ambient Steady-State 85 125 C/W Steady-State Maximum Junction-to-Lead R 43 60 C/W JL Rev 5: Nov 2011 www.aosmd.com Page 1 of 5 AO3423 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -20 V D GS DSS V =-20V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 12V I Gate-Body leakage current 10 A GSS DS GS V V =V , I =-250 Gate Threshold Voltage -0.5 -0.85 -1.2 V GS(th) DS GS D I On state drain current V =-4.5V, V =-5V -17 A GS DS D(ON) V =-10V, I =-2A 76 92 GS D m T =125C 99 119 J R Static Drain-Source On-Resistance DS(ON) V =-4.5V, I =-2A 94 118 m GS D V =-2.5V, I =-1A 128 166 m GS D g Forward Transconductance V =-5V, I =-2A 6.8 S DS D FS V Diode Forward Voltage I =-1A,V =0V -0.76 -1 V SD S GS I Maximum Body-Diode Continuous Current -1.5 A S DYNAMIC PARAMETERS C Input Capacitance 250 325 400 pF iss V =0V, V =-10V, f=1MHz C Output Capacitance 40 63 85 pF GS DS oss C Reverse Transfer Capacitance 22 37 52 pF rss R Gate resistance V =0V, V =0V, f=1MHz 11.2 17 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 3.2 4.5 nC g V =-4.5V, V =-10V, I =-2A Q Gate Source Charge 0.6 nC GS DS D gs Q Gate Drain Charge 0.9 nC gd t Turn-On DelayTime ns 11 D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==--1100VV,, VV ==--1100VV,, RR ==55,, 55..55 nnss r GS DS L R =3 t Turn-Off DelayTime 22 ns GEN D(off) t Turn-Off Fall Time 8 ns f t I =-2A, dI/dt=100A/s 6.1 rr Body Diode Reverse Recovery Time F ns Q I =-2A, dI/dt=100A/s 1.4 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedance from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Nov 2011 www.aosmd.com Page 2 of 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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