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V = -10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = -3 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 29 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 27 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S G D G TO-220F S Y-formed D Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP F9P25YDTU Unit V Drain-Source Voltage -250 V DSS I Drain Current - Continuous (T = 25C) -6.0 A D C - Continuous (T = 100C) -3.9 A C I Drain Current - Pulsed (Note 1) -24 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 650 mJ AS I (Note 1) Avalanche Current -6.0 A AR E Repetitive Avalanche Energy (Note 1) 5.0 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt -5.5 V/ns P Power Dissipation (T = 25C) 50 W D C - Derate above 25C 0.4 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds. Thermal Characteristics FQP F9P25YDTU + 6 Thermal Resistance, Junction-to-Case, Max. 2.5 + Thermal Resistance, Junction-to-Ambient, Max. - & 6 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF9P25 YDTU Rev. C0