AO4407 30V P-Channel MOSFET General Description Product Summary V -30V The AO4407 combines advanced trench MOSFET DS technology with a low resistance package to provide I (at V =-20V) -12A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =-20V) < 13m DS(ON) GS and battery protection applications. R (at V =-10V) < 14m DS(ON) GS R (at V =-5V) < 30m DS(ON) GS * RoHS and Halogen-Free Compliant 100% UIS Tested 100% R Tested g SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV --3300 VV DDSS Gate-Source Voltage V 25 V GS T =25C -12 A Continuous Drain I D Current T =70C -10 A A C Pulsed Drain Current I -60 DM C Avalanche Current I , I 26 A AS AR C Avalanche energy L=0.3mH E , E 101 mJ AS AR T =25C 3.1 A P W D B Power Dissipation T =70C 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 31 40 C/W R A D JA Maximum Junction-to-Ambient Steady-State 59 75 C/W Maximum Junction-to-Lead Steady-State R 16 24 C/W JL Rev.14.0: July 2013 www.aosmd.com Page 1 of 5 AO4407 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 25V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =-250A Gate Threshold Voltage -1.7 -2.25 -2.8 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -60 A GS DS D(ON) V =-20V, I =-12A 8.5 13 m GS D V =-10V, I =-12A 10 14 GS D R Static Drain-Source On-Resistance m DS(ON) T =125C 12 19 J V =-5V, I =-7A 19 30 m GS D g Forward Transconductance V =-5V, I =-10.5A 27 S DS D FS V Diode Forward Voltage I =-1A,V =0V -0.72 -1 V SD S GS I Maximum Body-Diode Continuous Current -4 A S DYNAMIC PARAMETERS C Input Capacitance 2060 2600 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 370 pF GS DS oss C Reverse Transfer Capacitance 295 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.2 2.4 3.6 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 24 30 36 nC g V =-10V, V =-15V, I =-12A Q Gate Source Charge 4.6 nC GS DS D gs Q Gate Drain Charge 10 nC gd t Turn-On DelayTime 11 ns D(on) VV ==--1100VV,, VV ==--1155VV,, tt TTuurrnn--OOnn RRiissee TTiimmee 99..44 nnss r GS DS R =1.25, R =3 t Turn-Off DelayTime L GEN 24 ns D(off) t Turn-Off Fall Time 12 ns f t I =-12A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 30 40 ns Q I =-12A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 22 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.14.0: July 2013 www.aosmd.com Page 2 of 5