AO4402 20V N-Channel MOSFET General Description Product Summary V 20V The AO4402 combines advanced trench MOSFET DS technology with a low resistance package to provide I (at V =4.5V) 20A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =4.5V) < 5.5m DS(ON) GS and battery protection applications. R (at V =2.5V) < 7m DS(ON) GS 100% UIS Tested 100% R Tested g SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS T =25C 20 A Continuous Drain I D T =70C Current 16 A A C Pulsed Drain Current I 140 DM C Avalanche Current I , I 57 A AS AR C Avalanche energy L=0.1mH E , E 162 mJ AS AR T =25C 3.1 A P W D B T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 31 40 C/W R JA A D Maximum Junction-to-Ambient Steady-State 59 75 C/W Maximum Junction-to-Lead Steady-State R 16 24 C/W JL Rev 1: Nov 2010 www.aosmd.com Page 1 of 6 AO4402 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 20 V D GS DSS V =20V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 12V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 0.5 1 1.6 V GS(th) DS GS D I On state drain current V =10V, V =5V 140 A GS DS D(ON) V =4.5V, I =20A 4.6 5.5 GS D m R Static Drain-Source On-Resistance T =125C 5.8 7 DS(ON) J V =2.5V, I =18A 5.5 7 m GS D V =5V, I =20A g Forward Transconductance 105 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.6 1 V S GS SD I Maximum Body-Diode Continuous Current 4 A S DYNAMIC PARAMETERS C Input Capacitance 3080 3860 4630 pF iss V =0V, V =10V, f=1MHz C Output Capacitance 520 740 960 pF oss GS DS C Reverse Transfer Capacitance 350 580 810 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.6 1.4 2.1 g GS DS SWITCHING PARAMETERS Q (4.5V) Total Gate Charge 28 36 43 nC g V =10V, V =10V, I =20A Q Gate Source Charge 7 9 11 nC gs GS DS D Q Gate Drain Charge 7 12 17 nC gd t Turn-On DelayTime 7 ns D(on) t Turn-On Rise Time V =10V, V =10V, R =0.5, 8 ns r GS DS L R =3 t Turn-Off DelayTime GEN 70 ns D(off) t Turn-Off Fall Time 18 ns f t I =20A, dI/dt=500A/s 13 rr Body Diode Reverse Recovery Time F 17 20 ns Q I =20A, dI/dt=500A/s 29 nC rr Body Diode Reverse Recovery Charge F 36 43 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25C.Maximum avalanche current limited by tester capability. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Nov 2010 www.aosmd.com Page 2 of 6