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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 3.0 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 30 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 11 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G G D S D TO-220 S TO-220F S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP6N90C FQPF6N90C Unit V Drain-Source Voltage 900 V DSS I Drain Current - Continuous (T = 25C) 6 6 * A D C - Continuous (T = 100C) 3.8 3.8 * A C I Drain Current - Pulsed (Note 1) 24 24 * A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 650 mJ AS I (Note 1) Avalanche Current 6A AR E Repetitive Avalanche Energy (Note 1) 16.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 167 56 W D C - Derate above 25C 1.43 0.48 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP 6N90C FQPF 6N90C Unit R Thermal Resistance, Junction-to-Case, Max. 0.75 2.25 C/W JC R Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP6N90C / FQPF6N90C Rev. C1