SMPS Series N-Channel
IGBT with Anti-Parallel
Hyperfast Diode
600 V
HGTG12N60A4D,
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HGTP12N60A4D,
HGT1S12N60A4DS
C
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching devices
G
combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the
E
low onstate conduction loss of a bipolar transistor. The much lower
onstate voltage drop varies only moderately between 25C and
COLLECTOR
150C. The IGBT used is the development type TA49335. The diode
(FLANGE)
used in antiparallel is the development type TA49371.
TO2203LD
This IGBT is ideal for many high voltage switching applications CASE 340AT
JEDEC ALTERNATE
operating at high frequencies where low conduction losses are
VERSION
essential. This device has been optimized for high frequency switch
G
C
E
mode power supplies.
Formerly Developmental Type TA49337.
COLLECTOR
2
(FLANGE)
D PAK3
Features
(TO263, 3LEAD)
CASE 418AJ
>100 kHz Operation 390 V, 12 A
JEDEC STYLE
200 kHz Operation 390 V, 9A G
E
600 V Switching SOA Capability
E
C
G
Typical Fall Time 70 ns at T = 125C
J
TO2473LD
Low Conduction Loss
SHORT LEAD
CASE 340CK
Temperature Compensating Saber Model
COLLECTOR
JEDEC STYLE
(FLANGE)
Related Literature
TB334 Guidelines for Soldering Surface Mount Components to
PC Boards
MARKING DIAGRAM
These are PbFree Devices
$Y&Z&3&K
$Y&Z&3&K $Y&Z&3&K
12N60A4D
12N60A4D 12N60A4D
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
12N60A4D = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
Semiconductor Components Industries, LLC, 2001
1 Publication Order Number:
April, 2020 Rev. 3 HGT1S12N60A4DS/DHGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise specified)
C
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
Parameter Symbol Unit
Collector to Emitter Voltage BV 600 V
CES
Collector Current Continuous
I 54 A
At T = 25C C25
C
I 23 A
At T = 110C C110
C
Collector Current Pulsed (Note 1) I 96 A
CM
Gate to Emitter Voltage Continuous V 20 V
GES
Gate to Emitter Voltage Pulsed V 30 V
GEM
Switching Safe Operating Area at T = 150C, Figure 2 SSOA 60 A at 600 V
J
Power Dissipation Total at T = 25C P 167 W
C D
Power Dissipation Derating T > 25C 1.33 W/C
C
Operating and Storage Junction Temperature Range T , T 55 to 150 C
J STG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s T 300 C
L
Package Body for 10 s, see Tech Brief 334. T 260 C
pkg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter Symbol Test Condition Min Typ Max Unit
Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0 V 600 V
CES C GE
Collector to Emitter Leakage Current I V = 600 V T = 25C 250 A
CES CE J
T = 125C 2.0 mA
J
Collector to Emitter Saturation Voltage V I = 12 A, V = 15 V T = 25C 2.0 2.7 V
CE(SAT) C GE J
T = 125C 1.6 2.0 V
J
Gate to Emitter Threshold Voltage V I = 250 A, V = 600 V 5.6 V
GE(TH) C CE
Gate to Emitter Leakage Current I V = 20 V 250 nA
GES GE
Switching SOA SSOA T = 150C, R = 10 , V = 15 V, 60 A
J G GE
L = 100 H, V = 600 V
CE
Gate to Emitter Plateau Voltage V I = 12 A, V = 300 V 8 V
GEP C CE
OnState Gate Charge Q I = 12 A, V = 300 V V = 15 V 78 96 nC
g(ON) C CE GE
V = 20 V 97 120 nC
GE
Current TurnOn Delay Time t IGBT and Diode at T = 25C, 17 ns
J
d(ON)I
I = 12 A,
CE
Current Rise Time t 8 ns
rI
V = 390 V,
CE
V = 15 V,
GE
Current TurnOff Delay Time t 96 ns
d(OFF)I
R = 10 ,
G
Current Fall Time t 18 ns
L = 500 H,
fI
Test Circuit (Figure 24)
TurnOn Energy (Note 3) E 55
J
ON1
TurnOn Energy (Note 3) E 160 J
ON2
TurnOff Energy (Note 2) E 50 J
OFF
Current TurnOn Delay Time t IGBT and Diode at T = 125C, 17 ns
d(ON)I J
I = 12 A,
CE
Current Rise Time t 16 ns
rI
V = 390 V,
CE
V = 15 V,
Current TurnOff Delay Time t GE 110 170 ns
d(OFF)I
R = 10 ,
G
Current Fall Time t 70 95 ns
L = 500 H,
fI
Test Circuit (Figure 24)
TurnOn Energy (Note 3) E 55 J
ON1
TurnOn Energy (Note 3) E 250 350 J
ON2
TurnOff Energy (Note 2) E 175 285 J
OFF
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