NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 43 A, 1200 V HGTG11N120CND www.onsemi.com The HGTG11N120CND is a Non Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss ofabipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49303. Features 43 A, 1200 V, T = 25 C C 1200 V Switching SOA Capability Typical Fall Time: 340 ns at T = 150 C TO2473LD J CASE 340CK Short Circuit Rating Low Conduction Loss Thermal Impedance SPICE Model MARKING DIAGRAMS www.onsemi.com This is PbFree Device Y&Z&3&K 11N120CND Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot 11N120CND = Specific Device Code ORDERING INFORMATION Part Number Package Brand HGTG11N120CND TO247 11N120CND NOTE: When ordering, use the entire part number. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: December, 2020 Rev. 2 HGTG11N120CND/DHGTG11N120CND ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless Otherwise Specified) C Description Symbol HGTG11N120CND Units Collector to Emitter Voltage BV 1200 V CES Collector Current Continuous I 43 A C25 At T = 25C C I 22 A At T = 110C C110 C Collector Current Pulsed (Note 1) I 80 A CM Gate to Emitter Voltage Continuous V 20 V GES Gate to Emitter Voltage Pulsed V 30 V GEM Switching Safe Operating Area at T = 150C (Figure 2) SSOA 55 A at 1200 V J Power Dissipation Total at T = 25C P 298 W C D Power Dissipation Derating T > 25C 2.38 W/C C Operating and Storage Junction Temperature Range T , T 55 to 150 C J STG Maximum Lead Temperature for Soldering T 260 C L Short Circuit Withstand Time (Note 2) at V = 15 V t 8 s GE SC Short Circuit Withstand Time (Note 2) at V = 12 V t 15 s GE SC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. V = 840 V, T = 125C, R = 10 . CE(PK) J G www.onsemi.com 2