X-On Electronics has gained recognition as a prominent supplier of RGT60TS65DGC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGT60TS65DGC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGT60TS65DGC11 ROHM

RGT60TS65DGC11 electronic component of ROHM
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Part No.RGT60TS65DGC11
Manufacturer: ROHM
Category: IGBT Transistors
Description: ROHM Semiconductor IGBT Transistors
Datasheet: RGT60TS65DGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.41 ea
Line Total: USD 3.41 
Availability - 379
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 RGT60TS65DGC11 More Buying Options & Price Grid(s)

Availability Price Quantity
379
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 3.41
10 : USD 2.893
25 : USD 2.783
100 : USD 2.42
250 : USD 2.321
450 : USD 1.936

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGT60TS65DGC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGT60TS65DGC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGT60TS65D 650V 30A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 30A C(100C) V 1.65V CE(sat) (Typ.) P 194W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Tube Applications General Inverter Reel Size (mm) - UPS Tape Width (mm) - Type Power Conditioner Basic Ordering Unit (pcs) 450 Welder Packing code C11 RGT60TS65D Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 55 A C C Collector Current T = 100C I 30 A C C *1 90 A Pulsed Collector Current I CP T = 25C I 40 A C F Diode Forward Current T = 100C I 20 A C F *1 Diode Pulsed Forward Current 90 A I FP T = 25C P 194 W C D Power Dissipation T = 100C P 97 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 1/11Data Sheet RGT60TS65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.77 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 2.00 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 -- V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 21.0mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 30A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.15 - j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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