X-On Electronics has gained recognition as a prominent supplier of RGT8BM65DTL IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGT8BM65DTL IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGT8BM65DTL ROHM

Hot RGT8BM65DTL electronic component of ROHM
RGT8BM65DTL ROHM
RGT8BM65DTL IGBT Transistors
RGT8BM65DTL Semiconductors

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See Product Specifications
Part No. RGT8BM65DTL
Manufacturer: ROHM
Category: IGBT Transistors
Description: ROHM Semiconductor IGBT Transistors
Datasheet: RGT8BM65DTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
85: USD 1.547 ea
Line Total: USD 131.5 
Availability - 7265
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ: 85  Multiples: 1
Pack Size: 1

 RGT8BM65DTL More Buying Options & Price Grid(s)

Availability Price Quantity
2092
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 2.35
10 : USD 1.776
100 : USD 1.243
500 : USD 1.0648
1000 : USD 1.0384
2500 : USD 1.023
10000 : USD 0.9977

2425
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 120
Multiples : 1
120 : USD 1.567

7265
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 85
Multiples : 1
85 : USD 1.547
100 : USD 1.313
200 : USD 1.2402
500 : USD 1.0463
1000 : USD 0.9737
2500 : USD 0.9325
5000 : USD 0.8925

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGT8BM65DTL from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGT8BM65DTL and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGT8BM65D 650V 8A Field Stop Trench IGBT Datasheet Outline TO-252 V 650V CES (2) I 8A C(100C) (1) V 1.65V CE(sat) (Typ.) (3) P 62W D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Taping Applications General Inverter Reel Size (mm) 330 UPS Tape Width (mm) 16 Type Power Conditioner Basic Ordering Unit (pcs) 2,500 Welder Packing code TL Marking RGT8BM65D Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 12 A C C Collector Current T = 100C I 8A C C *1 12 A Pulsed Collector Current I CP T = 25C I 7A C F Diode Forward Current T = 100C I 4A C F *1 Diode Pulsed Forward Current 12 A I FP T = 25C P 62 W C D Power Dissipation T = 100C P 31 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 2020.7 - Rev.C 1/11Datasheet RGT8BM65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 2.40 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 9.20 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 -- V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current - - 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 2.8mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 4A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 2020.7 - Rev.C 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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