X-On Electronics has gained recognition as a prominent supplier of RGT8BM65DTL igbt transistors across the USA, India, Europe, Australia, and various other global locations. RGT8BM65DTL igbt transistors are a product manufactured by ROHM. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

RGT8BM65DTL

RGT8BM65DTL electronic component of ROHM
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See Product Specifications
Part No.RGT8BM65DTL
Manufacturer: ROHM
Category:IGBT Transistors
Description: ROHM Semiconductor IGBT Transistors
Datasheet: RGT8BM65DTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

16: USD 1.0692 ea
Line Total: USD 17.11

Availability - 7265
Ships to you between
Fri. 31 May to Thu. 06 Jun
MOQ: 16  Multiples: 1
Pack Size: 1
Availability Price Quantity
2095 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 2.162
10 : USD 1.84
100 : USD 1.5065
250 : USD 1.4375
500 : USD 1.288
1000 : USD 1.1339
2500 : USD 1.1132
5000 : USD 1.0856
10000 : USD 1.0821

2425 - WHS 2


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 99
Multiples : 1
99 : USD 1.1333
100 : USD 1.0826
250 : USD 1.0392
500 : USD 1.0016
1000 : USD 0.969
2500 : USD 0.9404

7265 - WHS 3


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 16
Multiples : 1
16 : USD 1.0692
50 : USD 0.91
100 : USD 0.78
200 : USD 0.7394
500 : USD 0.6907
1000 : USD 0.65
2500 : USD 0.5947
5000 : USD 0.5704

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We proudly offer the RGT8BM65DTL IGBT Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RGT8BM65DTL IGBT Transistors.

RGT8BM65D 650V 8A Field Stop Trench IGBT Datasheet Outline TO-252 V 650V CES (2) I 8A C(100C) (1) V 1.65V CE(sat) (Typ.) (3) P 62W D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Taping Applications General Inverter Reel Size (mm) 330 UPS Tape Width (mm) 16 Type Power Conditioner Basic Ordering Unit (pcs) 2,500 Welder Packing code TL Marking RGT8BM65D Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 12 A C C Collector Current T = 100C I 8A C C *1 12 A Pulsed Collector Current I CP T = 25C I 7A C F Diode Forward Current T = 100C I 4A C F *1 Diode Pulsed Forward Current 12 A I FP T = 25C P 62 W C D Power Dissipation T = 100C P 31 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 2020.7 - Rev.C 1/11Datasheet RGT8BM65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 2.40 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 9.20 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 -- V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current - - 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 2.8mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 4A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.65 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 2020.7 - Rev.C 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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