X-On Electronics has gained recognition as a prominent supplier of RGTH80TS65DGC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGTH80TS65DGC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGTH80TS65DGC11 ROHM

Name: RGTH80TS65DGC11
Brand: ROHM
SKU: RGTH80TS65DGC11_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RGTH80TS65DGC11 electronic component of ROHM

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Part No.	RGTH80TS65DGC11
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	ROHM Semiconductor IGBT Transistors
Datasheet:	RGTH80TS65DGC11 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

450: USD 2.64 ea
Line Total: USD 1188

Availability - 0

MOQ: 450 Multiples: 450
Pack Size: 450

RGTH80TS65DGC11 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 450 Multiples : 450	450 : USD 2.64 900 : USD 2.376 2700 : USD 2.365 5400 : USD 2.277

0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 1 Multiples : 1	1 : USD 5.2291 5 : USD 3.4948 12 : USD 3.3109

We are delighted to provide the RGTH80TS65DGC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGTH80TS65DGC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGTH80TS65D 650V 40A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 40A C(100C) V 1.6V CE(sat) (Typ.) P 234W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector *1 3) Low Switching Loss & Soft Switching (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Tube Applications PFC Reel Size (mm) - UPS Tape Width (mm) - Type Power Conditioner Basic Ordering Unit (pcs) 450 IH Packing code C11 RGTH80TS65D Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 70 A C C Collector Current T = 100C I 40 A C C *1 160 A Pulsed Collector Current I CP T = 25C I 40 A C F Diode Forward Current T = 100C I 20 A C F *1 Diode Pulsed Forward Current 160 A I FP T = 25C P 234 W C D Power Dissipation T = 100C P 117 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 1/11Data Sheet RGTH80TS65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.64 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 2.00 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 27.6mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 40A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.6 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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Manufacturer ROHM ROHM
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Collector- Emitter Voltage VCEO Max 650 V 650 V
Collector-Emitter Saturation Voltage 1.6 V 1.6 V
Maximum Gate Emitter Voltage +/- 30 V +/- 30 V
Continuous Collector Current at 25 C 70 A 70 A
Gate-Emitter Leakage Current +/- 200 nA +/- 200 nA
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 234 W 234 W
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 175 C + 175 C
Series Rgth80ts65d Rgth80ts65d
Continuous Collector Current Ic Max 70 A 70 A
Brand Rohm Semiconductor Rohm Semiconductor
Operating Temperature Range - 40 C to + 175 C - 40 C to + 175 C
Cnhts 8541100000 8541100000
Hts Code 8541100080 8541100080
Mxhts 85411001 85411001
Product Type Igbt Transistors Igbt Transistors
Factory Pack Quantity : 450 450
Subcategory Igbts Igbts
Taric 8541100000 8541100000