X-On Electronics has gained recognition as a prominent supplier of RGTV00TS65GC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGTV00TS65GC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGTV00TS65GC11 ROHM

Name: RGTV00TS65GC11
Brand: ROHM
SKU: RGTV00TS65GC11_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RGTV00TS65GC11 electronic component of ROHM

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Part No.	RGTV00TS65GC11
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	IGBT Transistors 650V 50A TO-247N Field Stp Trnch IGBT
Datasheet:	RGTV00TS65GC11 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

450: USD 4.5384 ea
Line Total: USD 2042.28

Availability - 0

MOQ: 450 Multiples: 450
Pack Size: 450

RGTV00TS65GC11 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 07 Mar to Tue. 11 Mar MOQ : 450 Multiples : 450	450 : USD 4.5384

We are delighted to provide the RGTV00TS65GC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGTV00TS65GC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGTV00TS65 650V 50A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 50A C(100C) V 1.5V CE(sat) (Typ.) P 276W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching & Low Switching Loss (2) Collector 3) Short Circuit Withstand Time 2s (3) Emitter (1) 4) Pb - free Lead Plating RoHS Compliant (3) Applications Packaging Specifications Solar Inverter Packaging Tube UPS Reel Size (mm) - Welding Tape Width (mm) - Type IH Basic Ordering Unit (pcs) 450 PFC Packing Code C11 RGTV00TS65 Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES = 25C I T 95 A C C Collector Current T = 100C I 50 A C C *1 200 A Pulsed Collector Current I CP T = 25C P 276 W C D Power Dissipation T = 100C P 138 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 1/9Datasheet RGTV00TS65 Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.54 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage Current I V = 30V, V = 0V -- 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 34.3mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 50A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 2/9

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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