Preliminary Datasheet RJH60T04DPQ-A1 R07DS1191EJ0200 600V - 30A - IGBT Rev.2.00 Application:Current resonance circuit Apr 02, 2014 Features Optimized for current resonance application Low collector to emitter saturation voltage V = 1.5 V typ. (at I = 30 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching t = 45 ns typ. (at V = 400 V, V = 15 V , I = 30 A, Rg = 10 , Ta = 25C, Inductive load) f CC GE C Low tail loss E = 160 J typ. (at V = 300 V, V = 20 V, I = 50 A, Rg = 15 , Tc = 125C, current resonance circuit) tail CC GE C Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to emitter voltage V 600 V CES Gate to emitter voltage V 30 V GES Note1 Collector current Tc = 25 C I 60 A C Note1 Tc = 100 C I 30 A C Note1 Collector peak current I (peak) 180 A C Note2 Collector to emitter diode forward peak current I (peak) 80 A DF Collector dissipation P 208.3 W C Junction to case thermal impedance (IGBT) j-c 0.6 C/W Junction to case thermal impedance (Diode) j-cd 2.1 C/W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% R07DS1191EJ0200 Rev.2.00 Page 1 of 7 Apr 02, 2014 RJH60T04DPQ-A1 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max UnitTest Conditions Zero gate voltage collector current I 100 A V = 600 V, V = 0 CES CE GE Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4 8 V V = 10V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.50 1.95 V I = 30 A, V = 15V CE(sat) C GE Input capacitance Cies 1910 pF V = 25 V CE V = 0 Output capacitance Coes 69 pF GE f = 1 MHz Reveres transfer capacitance Cres 34 pF Total gate charge Qg 87 nC V = 15 V GE V = 300 V CE Gate to emitter charge Qge 18 nC I = 30 A C Gate to collector charge Qgc 41 nC Turn-on delay time t 54 ns V = 400 V d(on) CC V = 15 V Rise time t 52 ns GE r I = 30 A, Rg = 10 C Turn-off delay time t 136 ns d(off) Inductive load Fall time t 45 ns f Tail loss E 160 J V = 300 V, V = 20 V tail CC GE I = 50 A, Rg = 15 C Tc = 125C Current resonance circuit Note3 C-E diode forward voltage V 1.2 1.6 V I = 20 A ECF F C-E diode reverse recovery time t 100 ns I = 10 A rr F di /dt = 100 A/s F Notes: 3. Pulse test R07DS1191EJ0200 Rev.2.00 Page 2 of 7 Apr 02, 2014