X-On Electronics has gained recognition as a prominent supplier of RJH60T04DPQ-A1#T0 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RJH60T04DPQ-A1#T0 IGBT Transistors are a product manufactured by Renesas. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RJH60T04DPQ-A1#T0 Renesas

RJH60T04DPQ-A1#T0 electronic component of Renesas
RJH60T04DPQ-A1#T0 Renesas
RJH60T04DPQ-A1#T0 IGBT Transistors
RJH60T04DPQ-A1#T0  Semiconductors

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See Product Specifications
Part No. RJH60T04DPQ-A1#T0
Manufacturer: Renesas
Category: IGBT Transistors
Description: IGBT Transistors IGBT 650V TO247A
Datasheet: RJH60T04DPQ-A1#T0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 575
Multiples : 575
575 : USD 3.3897
1000 : USD 2.8379
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RJH60T04DPQ-A1#T0 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJH60T04DPQ-A1#T0 and other electronic components in the IGBT Transistors category and beyond.

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Preliminary Datasheet RJH60T04DPQ-A1 R07DS1191EJ0200 600V - 30A - IGBT Rev.2.00 Application:Current resonance circuit Apr 02, 2014 Features Optimized for current resonance application Low collector to emitter saturation voltage V = 1.5 V typ. (at I = 30 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching t = 45 ns typ. (at V = 400 V, V = 15 V , I = 30 A, Rg = 10 , Ta = 25C, Inductive load) f CC GE C Low tail loss E = 160 J typ. (at V = 300 V, V = 20 V, I = 50 A, Rg = 15 , Tc = 125C, current resonance circuit) tail CC GE C Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to emitter voltage V 600 V CES Gate to emitter voltage V 30 V GES Note1 Collector current Tc = 25 C I 60 A C Note1 Tc = 100 C I 30 A C Note1 Collector peak current I (peak) 180 A C Note2 Collector to emitter diode forward peak current I (peak) 80 A DF Collector dissipation P 208.3 W C Junction to case thermal impedance (IGBT) j-c 0.6 C/W Junction to case thermal impedance (Diode) j-cd 2.1 C/W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% R07DS1191EJ0200 Rev.2.00 Page 1 of 7 Apr 02, 2014 RJH60T04DPQ-A1 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max UnitTest Conditions Zero gate voltage collector current I 100 A V = 600 V, V = 0 CES CE GE Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4 8 V V = 10V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.50 1.95 V I = 30 A, V = 15V CE(sat) C GE Input capacitance Cies 1910 pF V = 25 V CE V = 0 Output capacitance Coes 69 pF GE f = 1 MHz Reveres transfer capacitance Cres 34 pF Total gate charge Qg 87 nC V = 15 V GE V = 300 V CE Gate to emitter charge Qge 18 nC I = 30 A C Gate to collector charge Qgc 41 nC Turn-on delay time t 54 ns V = 400 V d(on) CC V = 15 V Rise time t 52 ns GE r I = 30 A, Rg = 10 C Turn-off delay time t 136 ns d(off) Inductive load Fall time t 45 ns f Tail loss E 160 J V = 300 V, V = 20 V tail CC GE I = 50 A, Rg = 15 C Tc = 125C Current resonance circuit Note3 C-E diode forward voltage V 1.2 1.6 V I = 20 A ECF F C-E diode reverse recovery time t 100 ns I = 10 A rr F di /dt = 100 A/s F Notes: 3. Pulse test R07DS1191EJ0200 Rev.2.00 Page 2 of 7 Apr 02, 2014

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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