X-On Electronics has gained recognition as a prominent supplier of RJK0303DPB-00#J0 16-bit Microcontrollers - MCU across the USA, India, Europe, Australia, and various other global locations. RJK0303DPB-00#J0 16-bit Microcontrollers - MCU are a product manufactured by Renesas. We provide cost-effective solutions for 16-bit Microcontrollers - MCU, ensuring timely deliveries around the world.

RJK0303DPB-00#J0 Renesas

RJK0303DPB-00#J0 electronic component of Renesas
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Part No.RJK0303DPB-00#J0
Manufacturer: Renesas
Category: 16-bit Microcontrollers - MCU
Description: 16-bit Microcontrollers - MCU
Datasheet: RJK0303DPB-00#J0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 2.0163 ea
Line Total: USD 16.13 
Availability - 0
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 8
Multiples : 1
8 : USD 2.0163
10 : USD 1.8907
25 : USD 1.5144
50 : USD 1.3174
100 : USD 1.254
250 : USD 1.2415
500 : USD 1.1806

   
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Product Category
RoHS - XON
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Brand
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Packaging
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Channel Mode
Drain-Source On-Volt
Rad Hardened
Gate-Source Voltage Max
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We are delighted to provide the RJK0303DPB-00#J0 from our 16-bit Microcontrollers - MCU category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJK0303DPB-00#J0 and other electronic components in the 16-bit Microcontrollers - MCU category and beyond.

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RJK0303DPB Silicon N Channel Power MOS FET Power Switching REJ03G1341-0600 Rev.6.00 Apr 19, 2006 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 3.1 m typ. (at V = 10 V) DS(on) GS Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 1, 2, 3 Source G 4 Gate 4 5 Drain 3 2 1 SSS 1 23 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V +16/-12 V GSS Drain current I 40 A D Note1 Drain peak current I 160 A D(pulse) Body-drain diode reverse drain current I 40 A DR Note 2 Avalanche current I 17 A AP Note 2 Avalanche energy E 28 mJ AR Note3 Channel dissipation Pch 55 W Channel to Case Thermal Resistance ch-C 2.27 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Rev.6.00 Apr 19, 2006 page 1 of 6 RJK0303DPB Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.1 A V = +16/12 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 3.1 3.7 m I = 20 A, V = 10 V DS(on) D GS Note4 resistance R 4.3 5.6 m I = 20 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 80 S I = 20 A, V = 10 V fs D DS Input capacitance Ciss 3300 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 1150 pF Reverse transfer capacitance Crss 190 pF Gate Resistance Rg 0.7 Total gate charge Qg 23 nC V = 10 V, V = 4.5 V, DD GS I = 40 A D Gate to source charge Qgs 9.0 nC Gate to drain charge Qgd 5.2 nC Turn-on delay time t 10.5 ns V = 10 V, I = 20 A, d(on) GS D V 10 V,R = 0.5 , Rise time t 3.5 ns DD L r Rg = 4.7 Turn-off delay time t 46 ns d(off) Fall time t 4.5 ns f Note4 Bodydrain diode forward voltage V 0.84 1.10 V IF = 40 A, V = 0 DF GS Bodydrain diode reverse recovery t 35 ns IF = 40 A, V = 0 rr GS time di / dt = 100 A/ s F Notes: 4. Pulse test Rev.6.00 Apr 19, 2006 page 2 of 6

Tariff Desc

8542.31.00 52 No ..CMOS and MOS Microprocessors (MPU), Microcontrollers (MCU) and Digital Signal Processors (DSP)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits Digital.
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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