Preliminary Datasheet RJK0301DPB-02 R07DS1244EJ0901 30V, 60A, 2.8m max. (Previous: REJ03G1338-0900) Silicon N Channel Power MOS FET Rev.9.01 Jan 07, 2015 Power Switching Features High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance R = 2.3 m typ. (at VGS = 10 V) DS(on) Pb-free Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 1, 2, 3 Source G 4 Gate 4 5 Drain 3 2 1 SSS 1 23 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage V +16/ 12 V GSS Drain current ID 60 A Note1 Drain peak current I 240 A D(pulse) Body-drain diode reverse drain current IDR 60 A Note 2 Avalanche current I 30 A AP Note 2 Avalanche energy EAR 90 mJ Note3 Channel dissipation Pch 65 W Channel to Case Thermal Resistance ch-C 1.93 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C R07DS1244EJ0901 Rev.9.01 Page 1 of 6 Jan 07, 2015 RJK0301DPB-02 Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 V ID = 10 mA, VGS = 0 Gate to source leak current I 0.1 A V = +16/12 V, V = 0 GSS GS DS Zero gate voltage drain current IDSS 1 A VDS = 30 V, VGS = 0 Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state RDS(on) 2.3 2.8 m ID = 30 A, VGS = 10 V Note4 resistance R 3.0 4.0 m I = 30 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance yfs 110 S ID = 30 A, VDS = 10 V Input capacitance Ciss 5000 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 1450 pF Reverse transfer capacitance Crss 220 pF Gate Resistance Rg 0.8 Total gate charge Qg 32 nC V = 10 V, V = 4.5 V, DD GS I = 50 A D Gate to source charge Qgs 14.5 nC Gate to drain charge Qgd 7.0 nC Turn-on delay time td(on) 11.5 ns VGS = 10 V, ID = 30 A, VDD 10 V,RL = 0.33 , Rise time t 4.5 ns r Rg = 4.7 Turn-off delay time td(off) 58 ns Fall time t 6.0 ns f Note4 Bodydrain diode forward voltage VDF 0.84 1.10 V IF = 60 A, VGS = 0 Bodydrain diode reverse recovery t 50 ns IF = 60 A, V = 0 rr GS time di / dt = 100 A/ s F Notes: 4. Pulse test R07DS1244EJ0901 Rev.9.01 Page 2 of 6 Jan 07, 2015