IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications D High Efficiency Synchronous Rectification in SMPS V 40V DSS Uninterruptible Power Supply R typ. 1.4m DS(on) High Speed Power Switching Hard Switched and High Frequency Circuits max. 1.75m G I 340A D (Silicon Limited) Benefits I 195A S D (Package Limited) Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche D D D SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free S S S D D G G G 2 D Pak TO-220AB TO-262 IRFB3004PbF IRFS3004PbF IRFSL3004PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 340 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 240 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I 1310 DM Pulsed Drain Current P T = 25C Maximum Power Dissipation 380 W D C 2.5 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS 4.4 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 J T C STG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300 10lbf in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 300 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.40 JC R 0.50 CS Case-to-Sink, Flat Greased Surface, TO-220 C/W R Junction-to-Ambient, TO-220 62 JA 2 R 40 JA Junction-to-Ambient (PCB Mount) , D Pak www.irf.com 1 02/26/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.037 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.4 1.75 V = 10V, I = 195A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DSS DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.2 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 1170 S V = 10V, I = 195A DS D Q Total Gate Charge 160 240 nC I = 187A g D Q Gate-to-Source Charge 40 V =20V gs DS Q Gate-to-Drain Mille) Charge 68 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 92 I = 187A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 23 ns V = 26V d(on) DD t Rise Time 220 I = 195A r D t Turn-Off Delay Time 90 R = 2.7 d(off) G t Fall Time 130 V = 10V f GS C Input Capacitance 9200 pF V = 0V iss GS C Output Capacitance 2020 V = 25V oss DS C Reverse Transfer Capacitance 1340 = 1.0 MHz, See Fig. 5 rss C eff. (ER) 2440 V = 0V, V = 0V to 32V , See Fig. 11 oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 2690 V = 0V, V = 0V to 32V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current A MOSFET symbol S 340 (Body Diode) showing the G I Pulsed Source Current 1310 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 195A, V = 0V SD J S GS t T = 25C V = 34V, Reverse Recovery Time 27 ns rr J R 31 T = 125C I = 195A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 18 nC rr J T = 125C 41 J I T = 25C Reverse Recovery Current 1.2 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 195A, di/dt 930A/s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 195A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.016mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recom R = 25 , I = 195A, V =10V. Part not recommended for use mended footprint and soldering techniques refer to application note AN-994. GS G AS above this value . JC 2 www.irf.com