X-On Electronics has gained recognition as a prominent supplier of IRFS3306TRLPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFS3306TRLPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFS3306TRLPBF Infineon

IRFS3306TRLPBF electronic component of Infineon
IRFS3306TRLPBF Infineon
IRFS3306TRLPBF MOSFETs
IRFS3306TRLPBF  Semiconductors

Images are for reference only
See Product Specifications
Part No. IRFS3306TRLPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R
Datasheet: IRFS3306TRLPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 1.365 ea
Line Total: USD 1092 
Availability - 776
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
1708
Ship by Thu. 02 Jan to Mon. 06 Jan
MOQ : 1
Multiples : 1
1 : USD 2.849
10 : USD 1.991
100 : USD 1.496
800 : USD 1.265

540
Ship by Thu. 02 Jan to Mon. 06 Jan
MOQ : 1
Multiples : 1
1 : USD 2.436
10 : USD 1.806
26 : USD 1.708
500 : USD 1.666
800 : USD 1.652

417
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 255
Multiples : 1
255 : USD 1.9175
500 : USD 1.8362
1000 : USD 1.7225

8536
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 800
Multiples : 800
800 : USD 1.1885
1600 : USD 1.1826

776
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 800
Multiples : 800
800 : USD 1.365
1600 : USD 1.356

1546
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 14
Multiples : 1
14 : USD 4.5825
21 : USD 3.12
50 : USD 2.6162
100 : USD 2.2263
500 : USD 2.1775
800 : USD 1.8038

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRFS3306TRLPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFS3306TRLPBF and other electronic components in the MOSFETs category and beyond.

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IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications D High Efficiency Synchronous Rectification in SMPS V 60V DSS Uninterruptible Power Supply R typ. 3.3m DS(on) High Speed Power Switching max. 4.2m Hard Switched and High Frequency Circuits G I 160A D (Silicon Limited) Benefits I 120A D (Package Limited) S Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D Fully Characterized Capacitance and Avalanche D D SOA Enhanced body diode dV/dt and dI/dt Capability S S S Lead-Free D D D G G G RoHS Compliant, Halogen-Free 2 D Pak TO-220AB TO-262 IRFS3306PbF IRFSL3306PbF IRFB3306PbF GD S Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFB3306PbF TO-220 Tube 50 IRFB3306PbF IRFSL3306PbF TO-262 Tube 50 IRFSL3306PbF Tube 50 IRFS3306PbF IRFS3306PbF D2Pak Tape and Reel Left 800 IRFS3306TRLPbF Tape and Reel Right 800 IRFS3306TRRPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 160 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 110 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 120 D C GS 620 I Pulsed Drain Current DM 230 P T = 25C Maximum Power Dissipation W D C 1.5 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS Peak Diode Recovery 14 dv/dt V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C 300 Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 184 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.65 JC R Case-to-Sink, Flat Greased Surface , TO-220 0.50 CS C/W R Junction-to-Ambient, TO-220 62 JA 2 40 R Junction-to-Ambient (PCB Mount) , D Pak JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.3 4.2 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 48V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.7 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 230 S V = 50V, I = 75A DS D Q Total Gate Charge 85 120 nC I = 75A g D Q Gate-to-Source Charge 20 V =30V gs DS Q Gate-to-Drain Mille) Charge 26 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 59 I = 75A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 15 ns V = 30V d(on) DD t Rise Time 76 I = 75A r D t Turn-Off Delay Time 40 R = 2.7 d(off) G t Fall Time 77 V = 10V f GS C Input Capacitance 4520 pF V = 0V iss GS C Output Capacitance 500 V = 50V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz, See Fig. 5 rss C eff. (ER) Effective Output Capacitance (Energy Related) 720 V = 0V, V = 0V to 48V , See Fig. 11 oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 880 V = 0V, V = 0V to 48V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol 160 D S (Body Diode) showing the G I Pulsed Source Current 620 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 31 ns T = 25C V = 51V, rr J R 35 T = 125C I = 75A J F di/dt = 100A/ s Q Reverse Recovery Charge 34 nC T = 25C rr J T = 125C 45 J I T = 25C Reverse Recovery Current 1.9 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 75A, di/dt 1400A/ s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 120A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.04mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recom R = 25, I = 96A, V =10V. Part not recommended for use mended footprint and soldering techniques refer to application note AN-994. GS G AS above this value.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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