X-On Electronics has gained recognition as a prominent supplier of IXGK120N120B3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXGK120N120B3 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXGK120N120B3 IXYS

IXGK120N120B3 electronic component of IXYS
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Part No.IXGK120N120B3
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors 200Amps 1200V
Datasheet: IXGK120N120B3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 35.0556 ea
Line Total: USD 35.06 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 35.0556
10 : USD 32.3319
25 : USD 30.8614
100 : USD 27.5992
500 : USD 24.8341
1000 : USD 23.9849

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 35.9177
2 : USD 33.9638
3 : USD 33.9502

   
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We are delighted to provide the IXGK120N120B3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGK120N120B3 and other electronic components in the IGBT Transistors category and beyond.

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Advance Technical Information TM V = 1200V IXGK120N120B3 GenX3 1200V IGBTs CES I = 120A IXGX120N120B3 C90 V 3.0V CE(sat) High Speed Low Vsat PT IGBTs for 3-20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1200 V CES J C (TAB) E E V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES TM PLUS 247 (IXGX) V Transient 30 V GEM I T = 25C ( Chip Capability ) 200 A C25 C I T = 90C 120 A C90 C I Terminal Current Limit 120 A LRMS I T = 25C, 1ms 370 A CM C SSOA V = 15V, T = 125C, R = 2 I = 240 A GE VJ G CM G (TAB) C (RBSOA) Clamped Inductive Load V < 1200 V CES E P T = 25C 830 W C C G = Gate E = Emitter T -55 ... +150 C J C = Collector TAB = Collector T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L z T 1.6 mm (0.062 in.) from Case for 10 260 C Optimized for Low Conduction and SOLD Switching Losses M Mounting Torque ( IXGK ) 1.13/10 Nm/lb.in. z d Square RBSOA F Mounting Force ( IXGX ) 20..120/4.5..27 N/lb. C z International Standard Packages Weight TO-264 10 g PLUS247 6 g Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Applications J BV I = 250A, V = 0V 1200 V CES C CE z Power Inverters V I = 1mA, V = V 3.0 5.0 V z GE(th) C CE GE UPS z I V = V V = 0V 50 A Motor Drives CES CE CES, GE z T = 125C 5 mA SMPS J z PFC Circuits I V = 0V, V = 20V 400 nA GES CE GE z Battery Chargers V I = 100A, V = 15V, Note 1 2.4 3.0 V CE(sat) C GE z Welding Machines z Lamp Ballasts 2009 IXYS CORPORATION, All Rights Reserved DS100152(05/09)IXGK120N120B3 IXGX120N120B3 Symbol Test Conditions Characteristic Values TO-264 (IXGK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 40 70 S fs C CE C 9700 pF ies C V = 25V, V = 0V, f = 1 MHz 670 pF oes CE GE C 255 pF res Q 470 nC g(on) Q I = I , V = 15V, V = 0.5 V 67 nC ge C C90 GE CE CES Q 190 nC gc t 36 ns d(on) Inductive load, T = 25C J t 88 ns ri I = 100A, V = 15V E 5.5 mJ C GE on V = 600V, R = 2 t 275 ns CE G d(off) t 145 Note 2 ns fi E 5.8 mJ off t 34 ns d(on) Inductive load, T = 125C t J 88 ns ri I = 100A, V = 15V E 6.1 mJ C GE on t 315 V = 600V, R = 2 ns d(off) CE G t 570 ns Note 2 fi E 10.3 mJ off R 0.15 C/W thJC R 0.15 C/W thCK TM PLUS 247 (IXGX) Outline Note 1. Pulse Test, t 300 s, Duty Cycle, d 2%. 2. Switching Times may Increase for V (Clamp) > 0.8 V , CE CES Higher T or Increased R . J G Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) ADVANCE TECHNICAL INFORMATION Dim. Millimeter Inches The product presented herein is under development. The Technical Specifications offered are derived Min. Max. Min. Max. from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a A 4.83 5.21 .190 .205considered reflectio of the anticipated result. IXYS reserves the right to change limits, test A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 conditions, and dimensions without notice. 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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