Ignition IGBT Surface Mount > 400V > NGB8204AN 2 Pb NGB8204AN - 18 A, 400 V, N-Channel Ignition IGBT, D PAK Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for CoilonPlug Applications GateEmitter ESD Protection Temperature Compensated GateCollector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection 18 Amps, 400 Volts New Design Increases Unclamped Inductive Switching V (on) 2.0 V CE (UIS) Energy Per Area I = 10A, V 4.5 V C GE Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Maximum Ratings (T = 25C unless otherwise noted) J Low Saturation Voltage Rating Symbol Value Unit High Pulsed Current Capability Integrated GateEmitter Resistor (R ) GE CollectorEmitter Voltage V 430 V CES DC Emitter Ballasting for ShortCircuit Capability These are PbFree Devices CollectorGate Voltage V 430 V CER DC Functional Diagram GateEmitter Voltage V 18 V GE DC 18 A Collector CurrentContinuous DC I C T = 25C Pulsed C 50 A AC ESD (Human Body Model) ESD 8.0 kV R = 1500 , C = 100 pF ESD (Machine Model) ESD 800 V R = 0 , C = 200 pF Additional Information 115 Watts Total Power Dissipation T = 25C C P D Derate above 25C 0.77 W/C Operating and Storage 55 to T , T C J stg Datasheet Resources Samples Temperature Range +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18Ignition IGBT Surface Mount > 400V > NGB8204AN Unclamped CollectorToEmitter Avalanche Characteristics (55T 175C) J Rating Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy V = 50 V, V = 5.0 V, P I = 21.1 A, L = 1.8 mH, Starting T = 25C 400 CC GE k L J E mJ AS V = 50 V, V = 5.0 V, P I = 18.3 A, L = 1.8 mH, Starting T = 125C 400 CC GE k L J Reverse Avalanche Energy V = 100 V, V = 20 V, P I = 25.8 A, L = 6.0 mH, Starting T = 25C E 2000 mJ CC GE k L J AS(R) Maximum Short-Circuit Times (55C TJ 150C) Symbol Value Unit Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) s t 1 750 sc Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) t 2 5.0 ms sc Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case C/W R 1.3 JC 2 Thermal Resistance, Junction to Ambient D PAK (Note 1) R 50 C/W JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 275 C L 5 seconds 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18