Preliminary Datasheet RJH65D27BDPQ-A0 R07DS1328EJ0110 650V - 50A - IGBT Rev.1.10 Application: Inverter Mar 01, 2016 Features Low collector to emitter saturation voltage V = 1.3 V typ. (at I = 50 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching t = 120 ns typ. (at = 400 V, V = 15 V, I = 50 A, Rg = 10 , inductive load) f CC GE C Operation frequency (10kHz f 20kHz) Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 650 V Gate to emitter voltage V 30 V GES Collector current Tc = 25C IC 100 A Tc = 100C I 50 A C Note1 Collector peak current ic(peak) 200 A Note2 Clamped inductive load current I 150 A CL Collector to emitter diode Tc = 25C IDF 100 A forward current Tc = 100C I 50 A DF Note1 Collector to emitter diode forward peak current IDF(peak) 200 A Note3 Collector dissipation P 375 W C Note3 Junction to case thermal resistance (IGBT) j-c 0.40 C /W Note3 Junction to case thermal resistance (Diode) j-cd 0.50 C /W Note3 Junction temperature Tj 175 C Storage temperature Tstg 55 to +150 C Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data. R07DS1328EJ0110 Rev.1.10 Page 1 of 10 Mar 01, 2016 RJH65D27BDPQ-A0 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Zero gate voltage collector current ICES / IR 100 A VCE = 650 V, VGE = 0 / Diode reverse current Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage VGE(off) 4.5 6.5 V VCE = 10 V, IC = 1 mA Note4 Collector to emitter saturation voltage V 1.3 1.65 V I = 50 A, V = 15 V CE(sat) C GE Input capacitance Cies 2850 pF VCE = 25 V VGE = 0 Output capacitance Coes 175 pF f = 1 MHz Reverse transfer capacitance Cres 80 pF Total gate charge Qg 175 nC V = 15V GE V = 400 V Gate to emitter charge Qge 25 nC CE I = 50 A Gate to collector charge Qgc 90 nC C Turn-on delay time td(on) 20 ns VCC = 400 V Rise time t 35 ns VGE = 15 V r IC = 50 A Turn-off delay time td(off) 165 ns Rg = 10 Fall time t 120 ns f Note5 (Inductive load) Turn-on energy Eon 1.0 mJ Turn-off energy E 1.5 mJ off Total switching energy Etotal 2.5 mJ Turn-on delay time t 20 ns V = 400 V d(on) CC V = 15 V Rise time tr 35 ns GE I = 50 A C Turn-off delay time t 200 ns d(off) Rg = 10 Fall time tf 140 ns T = 150C C Turn-on energy E 1.5 mJ on Note5 (Inductive load) Turn-off energy Eoff 1.9 mJ Total switching energy E 3.4 mJ total Short circuit withstand time tsc 3 s VCC 360 V, VGE = 15 V TC = 150C Note4 FRD forward voltage VF 1.7 2.2 V IF = 50 A FRD reverse recovery time t 80 ns I = 50 A, di /dt = 300 A/ s rr F F FRD reverse recovery charge Qrr 0.35 C FRD peak reverse recovery current I 7.5 A rr Notes: 1. PW 10 s, duty cycle 1% 2. VGE = 15V 3. Please use this device in the thermal conditions which the junction temperature does not exceed 175C Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175C 4. Pulse test 5. Switching time test circuit and waveform are shown below. R07DS1328EJ0110 Rev.1.10 Page 2 of 10 Mar 01, 2016