X-On Electronics has gained recognition as a prominent supplier of RGTVX6TS65DGC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGTVX6TS65DGC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGTVX6TS65DGC11 ROHM

Name: RGTVX6TS65DGC11
Brand: ROHM
SKU: RGTVX6TS65DGC11_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RGTVX6TS65DGC11 electronic component of ROHM

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Part No.	RGTVX6TS65DGC11
Manufacturer:	ROHM
Category:	IGBT Transistors
Description:	IGBT Transistors IGBT WITH LOW COLLECTOR - EMIT
Datasheet:	RGTVX6TS65DGC11 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 9.0191 ea
Line Total: USD 9.02

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

RGTVX6TS65DGC11 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 10 Jan to Thu. 16 Jan MOQ : 1 Multiples : 1	1 : USD 10.6232 5 : USD 9.0957 10 : USD 7.9538 50 : USD 7.6366 100 : USD 7.0379 250 : USD 6.2068

0 Ship by Fri. 17 Jan to Wed. 22 Jan MOQ : 1 Multiples : 1	1 : USD 9.0191 10 : USD 8.8082 30 : USD 8.6669 100 : USD 8.5257

0 Ship by Wed. 08 Jan to Fri. 10 Jan MOQ : 450 Multiples : 450	450 : USD 5.115

We are delighted to provide the RGTVX6TS65DGC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGTVX6TS65DGC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGTVX6TS65D Datasheet 650V 80A Field Stop Trench IGBT lOutline TO-247N V 650V CES I 80A C (100C) V 1.5V CE(sat) (Typ.) P 404W D (1) (2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching & Low Switching Loss (2) Collector *1 (3) Emitter 3) Short Circuit Withstand Time 2s (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating RoHS Compliant lApplication lPackaging Specifications Solar Inverter Packaging Tube UPS Reel Size (mm) - Welding Tape Width (mm) - Type IH Basic Ordering Unit (pcs) 450 PFC Packing Code C11 Marking RGTVX6TS65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 144 A C C Collector Current T = 100C I 80 A C C *1 Pulsed Collector Current I 320 A CP T = 25C I 127 A C F Diode Forward Current T = 100C I 80 A C F *1 Diode Pulsed Forward Current I 320 A FP T = 25C P 404 W C D Power Dissipation T = 100C P 202 W C D Operating Junction Temperature T -40 to +175 C j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2019.01 - Rev.A 2019 ROHM Co., Ltd. All rights reserved. 1/11Datasheet RGTVX6TS65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.37 C/W (j-c) Thermal Resistance Diode Junction - Case R - - 0.57 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage I V = 30V, V = 0V - - 200 nA GES GE CE Current Gate - Emitter Threshold V V = 5V, I = 57.1mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 80A, V = 15V, C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2019.01 - Rev.A 2019 ROHM Co., Ltd. All rights reserved. 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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