X-On Electronics has gained recognition as a prominent supplier of FGD3050G2 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGD3050G2 IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGD3050G2 ON Semiconductor

FGD3050G2 electronic component of ON Semiconductor
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See Product Specifications
Part No.FGD3050G2
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors 500V 27A 1.3V 300mJ
Datasheet: FGD3050G2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.9301 ea
Line Total: USD 2325.25 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 1.8498
5000 : USD 1.8313
10000 : USD 1.813
15000 : USD 1.7949
20000 : USD 1.777
25000 : USD 1.6635
30000 : USD 1.6468
50000 : USD 1.6303
100000 : USD 1.6141

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.9301

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.437
10 : USD 1.9573
25 : USD 1.8538
100 : USD 1.5741
500 : USD 1.2945
1000 : USD 1.0874
2500 : USD 1.077

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FGD3050G2 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGD3050G2 and other electronic components in the IGBT Transistors category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. TM FGD3050G2 EcoSPARK 2 300mJ, 500V, N-Channel Ignition IGBT www.onsemi.com FGD3050G2 TM EcoSPARK 2 300mJ, 500V, N-Channel Ignition IGBT Applications Features SCIS Energy = 300mJ at TJ = 25C Automotive Ignition Coil Driver Circuits Logic Level Gate Drive Coil On Plug Applications RoHS Compliant Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage (I = 1mA) 500 V CER C BV Emitter to Collector Voltage - Reverse Battery Condition (I = 10mA) 20 V ECS C E I = 14.2A, L = 3.0mHy, R = 1K T = 25C 300 mJ SCIS25 SCIS GE C E I = 11.0A, L = 3.0mHy, R = 1K T = 150C 180 mJ SCIS150 SCIS GE C I Collector Current Continuous, at T = 25C, V = 5.0V 32 A C25 C GE I Collector Current Continuous, at T = 110C, V = 5.0V 27 A C110 C GE V Gate to Emitter Voltage Continuous 10 V GEM Power Dissipation Total T = 25C 150 W C P D o Power Dissipation Derating T > 25C 1.1 W/ C C o T Operating Junction Temperature Range -40 to +175 C J o T Storage Junction Temperature Range -40 to +175 C STG o T Max Lead Temp for soldering (Leads at 1.6mm from case for 10s) 300 C L o T Max Lead Temp for soldering (Package Body for 10s) 260 C PKG ESD Electrostatic Discharge Voltage at 100pF, 1500 4kV Semiconductor Components Industries, LLC, 2017 Publication Order Number: 1 May, 2017, Rev. 1.0 FGD3050G2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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