X-On Electronics has gained recognition as a prominent supplier of STGB40H65FB IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGB40H65FB IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGB40H65FB STMicroelectronics

STGB40H65FB electronic component of STMicroelectronics
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Part No.STGB40H65FB
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors Trench gate field-stop IGBT HB series 650 V 40 A high speed
Datasheet: STGB40H65FB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.9214 ea
Line Total: USD 4.92 
Availability - 901
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
901
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 4.9214
10 : USD 4.3146
30 : USD 3.792
100 : USD 3.4291
500 : USD 3.2614
1000 : USD 3.1853

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STGB40H65FB from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGB40H65FB and other electronic components in the IGBT Transistors category and beyond.

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STGB40H65FB Datasheet Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Features TAB Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current 2 3 Low saturation voltage: V = 1.6 V (typ.) I = 40 A 1 CE(sat) C Tight parameter distribution DPAK Safe paralleling Low thermal resistance C(2, TAB) Applications Photovoltaic inverters High frequency converters G(1) Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling E(3) operation. G1C2TE3 Product status link STGB40H65FB Product summary Order code STGB40H65FB Marking GB40H65FB Package DPAK Packing Tape and reel DS11724 - Rev 2 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGB40H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 80 C I A C Continuous collector current at T = 100 C 40 C (1) I Pulsed collector current 160 A CP V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 283 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.53 thJC C/W R Thermal resistance junction-ambient 62.5 thJA DS11724 - Rev 2 page 2/17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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