STGD6M65DF2 STMicroelectronics

STGD6M65DF2 Trench gate field-stop IGBT, M series 650 V, 6 A low loss Datasheet - production data Features 6 s of short-circuit withstand time VCE(sat) = 1.55 V (typ.) IC = 6 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control Figure 1: Internal schematic diagram UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGD6M65DF2 G6M65DF2 DPAK Tape and reel August 2016 DocID028703 Rev 3 1/20 www.st.com This is information on a product in full production. Contents STGD6M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 7 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 DPAK (TO-252) type A2 package information................................. 14 4.2 DPAK (TO-252) packing information ............................................... 17 5 Revision history ............................................................................ 19 2/20 DocID028703 Rev 3