STGB30H60DLLFBAG STMicroelectronics

STGB30H60DLLFBAG Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features AEC-Q101 qualified TAB Maximum junction temperature: T = 175 C J Logic level gate drive High speed switching series 2 Minimized tail current 3 V = 1.7 V (typ.) I = 30 A CE(sat) C 1 Low V soft recovery co-packaged diode F Tight parameters distribution D Safer paralleling PAK Low thermal resistance Applications Figure 1: Internal schematic diagram Ignition Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight CE(sat) parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGB30H60DLLFBAG GB30H60DLLFB DPAK Tape and reel October 2016 DocID029886 Rev 1 1/17 www.st.com This is information on a product in full production. Contents STGB30H60DLLFBAG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 4.1 DPAK package information ............................................................ 11 4.2 DPAK packing information ............................................................. 14 5 Revision history ............................................................................ 16 2/17 DocID029886 Rev 1