STGB30M65DF2 STMicroelectronics

STGB30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A 2 low-loss in a D PAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) I = 30 A CE(sat) C Tight parameters distribution Safer paralleling 2 Low thermal resistance 3 Soft and very fast recovery antiparallel diode 1 Applications D PAK Motor control UPS PFC Figure 1: Internal schematic diagram Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGB30M65DF2 G30M65DF2 DPAK Tape and reel April 2017 DocID027431 Rev 3 1/18 www.st.com This is information on a product in full production. Contents STGB30M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package information ..................................................................... 12 4.1 DPAK (TO-263) type A package information ................................. 12 2 4.2 D PAK (TO-263) type A packing information .................................. 15 5 Revision history ............................................................................ 17 2/18 DocID027431 Rev 3