X-On Electronics has gained recognition as a prominent supplier of STGB20N40LZ IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGB20N40LZ IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGB20N40LZ STMicroelectronics

Name: STGB20N40LZ
Brand: STMicroelectronics
SKU: STGB20N40LZ_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGB20N40LZ electronic component of STMicroelectronics

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Part No.	STGB20N40LZ
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	IGBT Transistors 390V IGBT EAS 300mJ Internally Clamped
Datasheet:	STGB20N40LZ Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

STGB20N40LZ More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1000 Multiples : 1000	1000 : USD 1.7103 2000 : USD 1.5837 3000 : USD 1.5837	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 7.3701 10 : USD 2.6472 25 : USD 2.4969	N/A Obsolete

0 MOQ : 7 Multiples : 1	7 : USD 1.1916	N/A Obsolete

We are delighted to provide the STGB20N40LZ from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGB20N40LZ and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

STGB20N40LZ, STGD20N40LZ Automotive-grade 390 V internally clamped IGBT E 300 mJ SCIS Datasheet - production data Features Designed for automotive applications and AEC-Q101 qualified TAB ESD gate-emitter protection TAB Gate-collector high voltage clamping 3 1 3 Logic level gate drive 1 Low saturation voltage DPAK 2 D PAK High pulsed current capability Gate and gate-emitter resistor Applications Pencil coil electronic ignition driver Figure 1. Internal schematic diagram C (2 or TAB) Description This application-specific IGBT utilizes the most advanced PowerMESH technology. The built-in Zener diodes between gate-collector and gate- emitter provide overvoltage protection R capabilities. The device also exhibits low on-state G G (1) voltage drop and low threshold drive for use in automotive ignition systems. R GE E (3) SC30180 Table 1. Device summary Order codes Marking Packages Packaging 2 STGB20N40LZ GB20N40LZ D PAK Tape and reel STGD20N40LZ GD20N40LZ DPAK Tape and reel June 2014 DocID024251 Rev 5 1/20 This is information on a product in full production. www.st.comContents STGB20N40LZ, STGD20N40LZ Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 9 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 19 2/20 DocID024251 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 425 V 425 V
Collector-Emitter Saturation Voltage 1.5 V 1.5 V
Maximum Gate Emitter Voltage 16 V 16 V
Gate-Emitter Leakage Current 625 uA 625 uA
Power Dissipation 150 W 150 W
Qualification Aec - Q101 Aec - Q101
Package / Case D2PAK - 3 D2PAK - 3
Packaging Reel Reel
Technology Si Si
Mounting Style Smd/Smt Smd/Smt
Technology Si Si
Pd - Power Dissipation 150 W 150 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Series Stgb20n40lz Stgb20n40lz
Continuous Collector Current Ic Max 25 A 25 A
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 1000 1000
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type Igbt Transistors Igbt Transistors
Subcategory Igbts Igbts
Taric 8541290000 8541290000