STGB20NB41LZ N-CHANNEL CLAMPED 20A - DPAK INTERNALLY CLAMPED PowerMESH IGBT TYPE V V I CES CE(sat) C STGB20NB41LZ CLAMPED < 2.0 V20A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP 3 1 LOW GATE CHARGE HIGH CURRENT CAPABILITY DPAK HIGH VOLTAGE CLAMPING FEATURE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the INTERNAL SCHEMATIC DIAGRAM PowerMESH IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS AUTOMOTIVE IGNITION ORDER CODE PART NUMBER MARKING PACKAGE PACKAGING 2 STGB20NB41LZT4 GB20NB41LZ TAPE & REEL D PAK April 2004 1/9STGB20NB41LZ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V =0) CLAMPED V CES GS V Emitter-Collector Voltage 20 V ECR V Gate-Emitter Voltage CLAMPED V GE I Collector Current (continuous) at T =25C 40 A C C I Collector Current (continuous) at T =100C 20 A C C I ( ) Collector Current (pulsed) 80 A CM Eas Single Pulse Energy Tc = 25C700 mJ P Total Dissipation at T =25C 200 W TOT C Derating Factor 1.33 W/C E ESD (Human Body Model) 8 KV SD T Storage Temperature stg 55 to 175 C T Operating Junction Temperature j ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.75 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (T =25 C UNLESS OTHERWISE SPECIFIED) CASE OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Clamped Voltage I =2mA,V =0, 382 412 442 V (CES) C GE Tc= - 40C 150C BV Emitter Collector Break-down I =75 mA, Tc=25C20 28 V (ECR) C Voltage BV Gate Emitter Break-down I =2mA 12 14 16 V GE G Voltage I V =15V,V =0,T =150 C 10 A CES CE GE C Collector cut-off Current (V =0) GE V =200 V, V =0,T =150C 100 A CE GE C I Gate-Emitter Leakage V =10V,V = 0 300 660 A GES GE CE Current (V =0) 1000 CE R Gate Emitter Resistance 10 15 30 K GE ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V V =V ,I = 250A, Tc=25C Gate Threshold Voltage 12.4V GE(th) CE GE C V Collector-Emitter Saturation V =4.5V, I =10A, Tc=25C 1.1 1.8 V CE(SAT) GE C Voltage 1.3 2.0 V V =4.5V, I =20A, Tc=25C GE C 2/9