X-On Electronics has gained recognition as a prominent supplier of STGB20NB41LZT4 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGB20NB41LZT4 IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGB20NB41LZT4 STMicroelectronics

STGB20NB41LZT4 electronic component of STMicroelectronics
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Part No.STGB20NB41LZT4
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: STMicroelectronics IGBT Transistors N-Ch Clamped 20 Amp
Datasheet: STGB20NB41LZT4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 1.7232 ea
Line Total: USD 1723.2 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 1.7232
2000 : USD 1.6968

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 2.5085
2000 : USD 2.3227

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 5.0612
10 : USD 3.3149
25 : USD 3.1267
100 : USD 2.7188
500 : USD 2.311
1000 : USD 2.0914

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3
Multiples : 1
3 : USD 2.1221

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 6
Multiples : 1
6 : USD 2.9003
10 : USD 2.0053
25 : USD 1.9651

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STGB20NB41LZT4 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGB20NB41LZT4 and other electronic components in the IGBT Transistors category and beyond.

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STGB20NB41LZ N-CHANNEL CLAMPED 20A - DPAK INTERNALLY CLAMPED PowerMESH IGBT TYPE V V I CES CE(sat) C STGB20NB41LZ CLAMPED < 2.0 V20A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP 3 1 LOW GATE CHARGE HIGH CURRENT CAPABILITY DPAK HIGH VOLTAGE CLAMPING FEATURE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the INTERNAL SCHEMATIC DIAGRAM PowerMESH IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS AUTOMOTIVE IGNITION ORDER CODE PART NUMBER MARKING PACKAGE PACKAGING 2 STGB20NB41LZT4 GB20NB41LZ TAPE & REEL D PAK April 2004 1/9STGB20NB41LZ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V =0) CLAMPED V CES GS V Emitter-Collector Voltage 20 V ECR V Gate-Emitter Voltage CLAMPED V GE I Collector Current (continuous) at T =25C 40 A C C I Collector Current (continuous) at T =100C 20 A C C I ( ) Collector Current (pulsed) 80 A CM Eas Single Pulse Energy Tc = 25C700 mJ P Total Dissipation at T =25C 200 W TOT C Derating Factor 1.33 W/C E ESD (Human Body Model) 8 KV SD T Storage Temperature stg 55 to 175 C T Operating Junction Temperature j ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.75 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (T =25 C UNLESS OTHERWISE SPECIFIED) CASE OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Clamped Voltage I =2mA,V =0, 382 412 442 V (CES) C GE Tc= - 40C 150C BV Emitter Collector Break-down I =75 mA, Tc=25C20 28 V (ECR) C Voltage BV Gate Emitter Break-down I =2mA 12 14 16 V GE G Voltage I V =15V,V =0,T =150 C 10 A CES CE GE C Collector cut-off Current (V =0) GE V =200 V, V =0,T =150C 100 A CE GE C I Gate-Emitter Leakage V =10V,V = 0 300 660 A GES GE CE Current (V =0) 1000 CE R Gate Emitter Resistance 10 15 30 K GE ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V V =V ,I = 250A, Tc=25C Gate Threshold Voltage 12.4V GE(th) CE GE C V Collector-Emitter Saturation V =4.5V, I =10A, Tc=25C 1.1 1.8 V CE(SAT) GE C Voltage 1.3 2.0 V V =4.5V, I =20A, Tc=25C GE C 2/9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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