STGB30H65FB STMicroelectronics

STGB30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed 2 in a D PAK package Datasheet - production data Features Maximum junction temperature: T = 175 C J TAB High speed switching series Minimized tail current VCE(sat) = 1.55 V(typ.) IC = 30 A 2 Safe paralleling 3 Tight parameter distribution 1 Low thermal resistance D PAK Applications Photovoltaic inverters High frequency converters Figure 1: Internal schematic diagram Description This device is an IGBT developed using an C(2, TAB) advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching G(1) loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E(3) G1C2TE3 Table 1: Device summary Order code Marking Package Packing 2 STGB30H65FB GB30H65FB D PAK Tape and reel May 2017 DocID030599 Rev 2 1/17 www.st.com This is information on a product in full production. Contents STGB30H65FB Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 2 4.1 D PAK package information ............................................................ 11 4.2 D2PAK packing information ............................................................ 14 5 Revision history ............................................................................ 16 2/17 DocID030599 Rev 2