X-On Electronics has gained recognition as a prominent supplier of AIKP20N60CTAKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. AIKP20N60CTAKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

AIKP20N60CTAKSA1 Infineon

AIKP20N60CTAKSA1 electronic component of Infineon
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Part No.AIKP20N60CTAKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors DISCRETES
Datasheet: AIKP20N60CTAKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.572 ea
Line Total: USD 5.57 
Availability - 371
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
371
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 5.572
3 : USD 4.928
5 : USD 4.27
12 : USD 4.046
250 : USD 3.892

   
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We are delighted to provide the AIKP20N60CTAKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AIKP20N60CTAKSA1 and other electronic components in the IGBT Transistors category and beyond.

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The AIKP20N60CTAKSA1 is an IGBT Transistor DISCRETES from Infineon Technologies AG. It is a 600V N Channel MOSFET discrete transistor with a drain-source resistance of 3.7mO. It has a gate-source voltage rating of 20V and a continuous drain current of 20A, offering low on-state losses and low switching losses. It features a low gate charge and a fast intrinsic body diode with reverse recovery time of 12ns. It is designed for motor control, lighting control, and industrial automation applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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