STGB6M65DF2 STMicroelectronics

STGB6M65DF2 Trench gate field-stop IGBT, M series 650 V, 6 A low loss Datasheet - production data Features 6 s of short-circuit withstand time TAB VCE(sat) = 1.55 V (typ.) IC = 6 A Tight parameter distribution Safer paralleling 2 Low thermal resistance 3 Soft and very fast recovery antiparallel diode 1 Applications D PAK Motor control UPS PFC Figure 1: Internal schematic diagram Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGB6M65DF2 G6M65DF2 DPAK Tape and reel August 2016 DocID028704 Rev 3 1/19 www.st.com This is information on a product in full production. Contents STGB6M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 7 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 DPAK (TO-263) type A package information ................................. 13 4.2 DPAK packing information ............................................................. 16 5 Revision history ............................................................................ 18 2/19 DocID028704 Rev 3