STGD18N40LZT4 STMicroelectronics

STGD18N40LZT4 Datasheet Automotive-grade 390 V internally clamped IGBT E 180 mJ SCIS Features TAB AEC-Q101 qualified 3 2 SCIS energy of 180 mJ T = 150 C, L = 3 mH C 1 Parts are 100% tested in SCIS DPAK ESD gate-emitter protection C (2 or TAB) Gate-collector high voltage clamping Logic level gate drive Very low saturation voltage High pulsed current capability R G Gate and gate-emitter resistor G (1) R GE Applications Pencil coil electronic ignition driver E (3) IGBTG1C2TABE3ESD Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required. Product status link STGD18N40LZT4 Product summary Order code STGD18N40LZT4 Marking GD18N40LZ Package DPAK Packing Tape and reel DS13627 - Rev 1 - January 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGD18N40LZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) V V CES GE CES(clamped) V Emitter-collector voltage (V = 0 V) 20 V ECS GE I Continuous collector current at T = 100 C 30 A C C (1) I Pulsed collector current 40 A CP V V Gate-emitter voltage V GE GE(clamped) P Total power dissipation at T = 25 C 150 W TOT C Single pulse energy T = 25 C, L = 3 mH, V = 50 V 300 mJ C CC (2) E SCIS Single pulse energy T = 150 C, L = 3 mH, V = 50 V 180 mJ C CC Human body model, R = 1.5 k, C = 100 pF 8 kV ESD Machine model, R = 0, C = 100 pF 800 V Charged device model 2 kV T Storage temperature range C STG -55 to 175 T Operating junction temperature range C J 1. Pulse width limited by max. junction temperature. 2. For E test circuit refer to Figure 14. Test circuit for inductive load switching with A and B not connected. SCIS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 1 C/W thJC R Thermal resistance, junction-to-ambient 100 C/W thJA DS13627 - Rev 1 page 2/16