STGD25N40LZAG STMicroelectronics

STGB25N40LZAG, STGD25N40LZAG Datasheet Automotive-grade 400 V internally clamped IGBT E 320 mJ SCIS Features TAB AEC-Q101 qualified TAB SCIS energy of 320 mJ T = 25 C J 3 2 2 1 Parts are 100% tested in SCIS 3 1 ESD gate-emitter protection 2 D PAK DPAK Gate-collector high voltage clamping Logic level gate drive C (2 or TAB) Very low saturation voltage High pulsed current capability Gate and gate-emitter resistor R G G (1) Applications R GE Automotive ignition coil driver circuit E (3) IGBTG1C2TABE3ESD Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required. Product status STGB25N40LZAG STGD25N40LZAG Product summary Order code STGB25N40LZAG Marking GB25N40LZ Package DPAK Packing Tape and reel Order code STGD25N40LZAG Marking GD25N40LZ Package DPAK Packing Tape and reel DS12284 - Rev 3 - February 2018 www.st.com/ For further information contact your local STMicroelectronics sales office.STGB25N40LZAG, STGD25N40LZAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) V V CES GE CES(clamped) V Emitter-collector voltage (V = 0 V) 20 V ECS GE Continuous collector current at T = 25 C, V = 4 V 25 A C GE I C Continuous collector current at T = 100 C, V = 4 V 25 A C GE (1) I Pulsed collector current 50 A CP V V (clamped) Gate-emitter voltage V GE GE P Total dissipation at T = 25 C 150 W TOT C (2) E Self clamping inductive switching energy 320 mJ SCIS 25 (3) E Self clamping inductive switching energy T = 150 C 180 mJ SCIS 150 J Human body model, R = 1.5 k, C = 100 pF 4 kV ESD Charged device model 2 kV T Storage temperature range STG - 55 to 175 C T Operating junction temperature range J 1. Pulse width limited by maximum junction temperature. 2. Starting T = 25 C, L = 3 mH, R = 1 k, V = 50 V during inductor charging and V = 0 V during the time in clamp. Parts j g cc cc are 100% electrically tested in production. 3. Starting T = 150 C, L = 3 mH, R = 1 k, V = 50 V during inductor charging and V = 0 V during the time in clamp. j g cc cc Table 2. Thermal data Symbol Parameter Value Unit DPAK DPAK R Thermal resistance junction-case 1 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb DS12284 - Rev 3 page 2/20